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TLC2801Z, TLC2801Y
Advanced LinCMOS
LOW-NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS116B – JULY 1982 – REVISED SEPTEMBER 1996
3–1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Low Input Noise Voltage:
35 nV/
√
Hz Max at f = 10 Hz
15 nV/
√
Hz Max at f = 1 kHz
Low Input Offset Voltage:
500
μ
V Max at T
A
= 25
°
C
1.5 mV Max at T
A
= Full Range
Excellent Offset Voltage Stability With
Temperature . . . 4
μ
V/
°
C Typ
Low Input Bias Current:
1 pA Typ at T
A
= 25
°
C
250 pA Typ at T
A
= 150
°
C
Specified for Both Single-Supply and
Split-Supply Operation
Common-Mode Input Voltage Range
Includes the Negative Rail
description
The TLC2801 is a precision, low-noise
operational amplifier manufactured using Texas
Instruments Advanced LinCMOS
process. The
TLC2801 combines the noise performance of the
lowest-noise JFET amplifiers with the dc precision
available previously only in bipolar amplifiers. The
Advanced LinCMOS
process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
The combination of excellent dc and noise
performance with a common-mode input voltage
range that includes the negative rail makes the
TLC2801 an ideal choice for high-impedance,
low-level signal conditioning applications in either
single-supply or split-supply configurations.
The device inputs and output are designed to
withstand –100-mA surge currents without
sustaining latch-up. In addition, internal ESD-
protection circuits prevent functional failures at
voltages up to 2000 V as tested under
MIL-STD-883C, Method 3015.2; however, care
should be exercised in handling these devices as
exposure to ESD may result in degradation of the
device parametric performance.
The TLC2801 is characterized for operation over
the temperature range of –40
°
C to 150
°
C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright
1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
110
100
90
80
120
130
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
0
25
50
75
100
125
150
TA – Free-Air Temperature –
°
C
1
2
3
4
8
7
6
5
NC
1IN–
1IN+
V
DD–
/GND
NC
V
DD+
OUT
NC
D OR P PACKAGE
(TOP VIEW)
NC – No internal connection
VDD
±
=
±
5 V, RL = 10 k
–50
–25
VDD
±
=
±
5 V, RL = 500 k
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A
V