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參數(shù)資料
| 型號： | TK2150 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 運動控制電子 |
| 英文描述： | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| 中文描述： | 類立體聲功率200W - T的數(shù)字音頻放大器驅(qū)動程序使用數(shù)字功率處理技術 |
| 文件頁數(shù)： | 26/34頁 |
| 文件大?。?/td> | 663K |
| 代理商： | TK2150 |
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Tripath Technology, Inc. - Technical Information
26
TK2150 – Rev. 1.0/12.02
The half-bridge power MOSFETs require a deadtime between when one transistor is turned off
and the other is turned on (break-before-make) in order to minimize shoot through currents. The
TC2001 has BBM0 and BBM1 that are logic inputs (connected to logic high or pulled down to
logic low) that control the break-before-make timing of the output transistors according to the
following table.
BBM1
BBM0
Delay
0
0
120 ns
0
1
80 ns
1
0
40 ns
1
1
0 ns
Table 1: BBM Delay
The tradeoff involved in making this setting is that as the delay is reduced, distortion levels
improve but shoot-through and power dissipation increase. All typical curves and performance
information were done with using the 40ns BBM setting. The actual amount of BBM required is
dependent upon other component values and circuit board layout, the value selected should be
verified in the actual application circuit/board. It should also be verified under maximum
temperature and power conditions since shoot-through in the output MOSFETs can increase
under these conditions, possibly requiring a higher BBM setting than at room temperature.
Recommended MOSFETs
The following devices are capable of achieving full performance, both in terms of distortion and
efficiency, for the specified load impedance and voltage range.
Device Information – Recommended MOSFETs
Part Number
Manufacturer
BV
DSS
(V)
IRF520N
International Rectifier
100
I
D
(A)
9.7
Q
g
(nC)
25(max.)
R
DS(on)
(
)
0.20 (max.)
P
D
(W)
48
Package
TO220
FQP13N10
Fairchild Semiconductor
100
12.8
12
0.142
65
TO220
STP14NF10
ST Microelectronics
100
14
15.5
0.16
60
TO220
IRF530N
International Rectifier
100
17
37(max.)
0.09 (max.)
70
TO220
BUK7575-100A
STP24NF10
Note: The devices are listed in ascending current capability not in order of recommendation.
The following information represents qualitative data from system development using the TK2150
and the associated MOSFETs. Recommendations such as maximum supply voltages and gate
resistor values are dependent on the PCB layout and component location. The gate resistor
values were chosen to achieve about 18-80mA of idle current from the VPP supply. This value of
supply current is a good compromise between low power efficiency and high frequency THD+N
performance. As shown in Table 2 below, increasing the gate resistor value will improve high
frequency THD+N performance at the expense of idle current draw. The BBM setting was 40nS
in all cases. It should be understood that different MOSFETs will have different characteristics
and will require some adjustment to the gate resistor to achieve the same idle current.
Philips Semiconductor
100
23
25
0.064
99
TO220
ST Microelectronics
100
26
30
0.055
85
TO220
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