參數(shù)資料
型號(hào)： TISPPBL3D-S
廠商： BOURNS INC
元件分類： 保護(hù)電路
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
中文描述： TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝： ROHS COMPLIANT, PLASTIC, MS-012, SO-8
文件頁數(shù)： 3/14頁
文件大?。?/td> 356K
代理商： TISPPBL3D-S
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, -40
°
C
≤
TA
≤
85
°
C (Unless Otherwise Noted)
Parameter
Thermal Characteristics
TISPPBL3 Programmable Protector
Parameter
Test Conditions
Min.
Typ.
Max.
160
Unit
°
C/W
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.52 W, T
A
= 85
°
C, 5 cm
2
, FR4 PCB
Test Conditions
Min
Typ
Max
-5
-50
Unit
μ
A
μ
A
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= -40
°
C
T
J
= 85
°
C
V
(BO)
Breakover voltage
I
T
= -100 A, 2/10 generator,
V
GG
= -100 V,
Figure 3 test circuit (see Figure 2)
I
T
= -100 A, 2/10 generator, V
(BR)
< V
GG
,
Figure 3 test circuit (see Figure 2 and Note 4)
I
F
= 5 A, t
w
= 500
μ
s
I
F
= 100 A, 2/10 generator,
Figure 3 test circuit (see Figure 2 and Note 4)
I
F
= 100 A, 2/10 generator,
Figure 3 test circuit (see Figure 2 and Note 4)
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -50 V,
-120
V
t
(BR)
Breakdown time
1
μ
s
V
F
Forward voltage
Peak forward recovery
voltage
3
V
V
FRM
8
V
t
FR
Forward recovery time
V
F
> 5 V
V
F
> 1 V
1
10000
μ
s
I
H
Holding current
-150
mA
μ
A
μ
A
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
J
= -40
°
C
T
J
= 85
°
C
-5
-50
I
GAT
Gate reverse current,
on state
Gate reverse current,
forward conducting
state
Gate trigger current
Gate trigger voltage
Gate impulse breako-
ver voltage
I
T
= -0.5 A, t
w
= 500
μ
s, V
GG
= -50 V, T
A
= 25
°
C
-1
mA
I
GAF
I
F
= 1 A, t
w
= 500
μ
s, V
GG
= -50 V, T
A
= 25
°
C
-10
mA
I
GT
V
GT
I
T
= -5 A, t
p(g)
≥
20
μ
s, V
GG
= -50 V, T
A
= 25
°
C
I
T
= -5 A, t
p(g)
≥
20
μ
s, V
GG
= -50 V, T
A
= 25
°
C
I
T
= -100 A, 2/10 generator,
Figure 3 test circuit (see Figure 2 and Note 4)
5
mA
V
2.5
V
GK(BO)
20
V
C
AK
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, T
A
= 25
°
C
(see Note 5)
V
D
= -3 V
V
D
= -50 V
110
60
pF
pF
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the SLIC supply
voltage value (V
GG
).
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
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