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參數(shù)資料
| 型號： | TISPPBL2SD |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS |
| 中文描述： | 愛立信元件博亞可編程過電壓保護3xxx系列SLIC組件 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 293K |
| 代理商： | TISPPBL2SD |
TISPPBL2SD
PROGRAMMABLE OVERVOLTAGE PROTECTORS
FOR ERICSSON COMPONENTS PBL 3xxx SLICS
AUGUST 1999
2
P R O D U C T I N F O R M A T I O N
subsides the high holding current of the crowbar prevents d.c. latchup. The TISPPBL2S buffered gate design
reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The TISPPBL2S is the TISPPBL2D
with a different pinout. The feed-through Ring (leads 4 — 5) and Tip (leads 1 — 8) connections have been
replaced by single Ring (lead 4) and Tip (lead 1) connections. This increases package creepage distance of
the biased to ground connections from about 0.7 mm to over 3 mm.
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C
≤
T
J
≤
85 °C. The surge may be repeated after the device returns to
its initial conditions.
2. These non-repetitive rated currents are peak values for either polarirty. The rated current values may be applied either to the Ring
to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied
simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above
85 °C, derate linearly to zero at 150 °C lead temperature.
absolute maximum ratings
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-100
V
-90
V
I
TSP
A
10/1000 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
30
0.2/310 μs (I3124, open-circuit voltage wave shape 0.5/700 μs)
5/310 μs (ITU-T K20 & K21, open-circuit voltage wave shape 10/700 μs)
1/20 μs (ITU-T K22, open-circuit voltage wave shape 1.2/50 μs)
40
40
100
2/10 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
100
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2)
I
TSM
A
100 ms
11
1 s
5 s
300 s
900 s
4.5
2.4
0.95
0.93
Non-repetitive peak gate current, 1/2 μs pulse, cathodes commoned (see Note 1)
I
GSM
T
A
T
J
T
stg
40
A
Operating free-air temperature range
-40 to +85
°C
Junction temperature
-40 to +150
°C
Storage temperature range
-40 to +150
°C
recommended operating conditions
MIN
TYP
MAX
UNIT
C
G
Gate decoupling capacitor
100
220
nF
R
1
TISPPBL2S series resistor for GR-1089-CORE first-level and second-level surge survival
TISPPBL2S series resistor for GR-1089-CORE first-level surge survival
TISPPBL2S series resistor for ITU-T recommendation K20/21
40
25
10
electrical characteristics, T
amb
= 25 °C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= -40 °C
T
J
= 85 °C
-5
μA
-50
μA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TISPPBL2SDR | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL2SDR-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL2SE | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL2SE-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3 | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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