- 您現在的位置：買賣IC網 > PDF目錄361460 > TISPPBL1P (Power Innovations International, Inc.) DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS PDF資料下載
參數資料
| 型號： | TISPPBL1P |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| 中文描述： | 雙遠期導電的P -門晶閘管愛立信成分SLIC組件 |
| 文件頁數： | 9/19頁 |
| 文件大?。?/td> | 364K |
| 代理商： | TISPPBL1P |
9
AUGUST 1997 - REVISED DECEMBER 1999
TISPPBL1D, TISPPBL1P TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
P R O D U C T I N F O R M A T I O N
The negative protection voltage will be the sum of the gate supply (V
B
) and the peak gate(terminal)-cathode
voltage (V
GK(BO)
). Under a.c. overvoltage conditions V
GK(BO)
will be less than 3 V. The integrated transistor
buffer in the TISPPBLx greatly reduces the gate positive current (from about 50 mA to 1 mA) and introduces a
negative gate current. Figure 1 shows that the TISPPBLx gate current depends on the current being
conducted by the principal terminals. The gate current is positive during clipping (charging the V
B
supply) and
negative when the thyristor is on or the diode is conducting (loading the V
B
supply). Without the negative gate
current and the reduced level of positive gate current the V
B
supply could be charged with a current of nearly
100 mA. As the V
B
supply is likely to be electronic it would not be designed to be charged like a battery. As a
result, the SLIC could be destroyed by the voltage of V
B
increasing to a level that exceeded the SLIC’s
capability on the V
BAT
pin. The integrated transistor buffer removes this problem.
Fast rising impulses will cause short term overshoots in gate-cathode voltage. The negative protection
voltage under impulse conditions will also be increased if there is a long connection between the gate
decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (I
G
) is
the same as the cathode current (I
K
). Rates of 60 A/μs can cause inductive voltages of 0.6 V in 2.5 cm of
printed wiring track. To minimise this inductive voltage increase of protection voltage, the length of the
capacitor to gate terminal tracking should be minimised. Inductive voltages in the protector cathode wiring
can increase the protection voltage. These voltages can be minimised by routing the SLIC connection through
the protector as shown in Figure 13 and Figure 14.
Positive overvoltages (Figure 14) are clipped to ground by forward conduction of the diode section in the
TISPPBLx. Fast rising impulses will cause short term overshoots in forward voltage (V
FRM
).
TISPPBLx limiting voltages
This clause details the TISPPBLx voltage limiting levels under impulse conditions.
test circuit
Figure 3 shows the basic test circuit used for the measurement of impulse limiting voltage. During the
impulse, the high levels of electrical energy and rapid rates of change cause electrical noise to be induced or
conducted into the measurement system. It is possible for the electrical noise voltage to be many times the
wanted signal voltage. Elaborate wiring and measurement techniques where used to reduce the noise
voltage to less than 2 V peak to peak.
Figure 13 NEGATIVE OVERVOLTAGE CONDITION
Figure 14 POSITIVE OVERVOLTAGE CONDITION
AI6XANB
SLIC
SLIC
PROTECTION
TISPPBLx
C1
V
B
C2
D1
V
Bat
Th4
Th5
I
T
I
F
AI6XAOB
SLIC
SLIC
PROTECTION
TISPPBLx
C1
V
B
C2
D1
V
Bat
Th4
Th5
相關PDF資料 |
PDF描述 |
|---|---|
| TISPPBL2D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| TISPPBL2P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| TISPPBL2SD | PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS |
| TISPPBL2SDR | PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS |
| TK10415 | CERAMIC SPEAKER DRIVE AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TISPPBL1P-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL1SE | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL1SE-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL2P | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL2PS | 制造商:Bourns Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。