參數(shù)資料
型號(hào)： TISPPBL1P
廠商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -門晶閘管愛立信成分SLIC組件
文件頁數(shù)： 3/19頁
文件大?。?/td> 364K
代理商： TISPPBL1P
3
AUGUST 1997 - REVISED DECEMBER 1999
TISPPBL1D, TISPPBL1P TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
P R O D U C T I N F O R M A T I O N
recommended operating conditions
SEE Figure 18
MIN
TYP
MAX
UNIT
C1
Gate decoupling capacitor
100
220
nF
R1a
R1b
Series resistance for GR-1089-CORE first-level and second-level surge survival
Series resistance for GR-1089-CORE first-level surge survival
Series resistance for ITU-T recommendation K20/21
40
25
10
electrical characteristics, -40 °C
≤
T
A
≤
85 °C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= -40 °C
T
J
= 85 °C
-5
μA
-50
μA
V
(BO)
Breakover voltage
I
T
= -20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2)
I
T
= -20 A, 0.5/700 generator, Figure 3 test cir-
cuit (See Figure 2)
-70
V
t
(BR)
Breakdown time
V
(BR)
< -50 V
1
μs
V
F
Forward voltage
I
F
= 5 A, t
w
= 500 μs
3
V
V
FRM
Peak forward recovery
voltage
I
F
= 20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2)
8
V
t
FR
Forward recovery time
I
F
= 20 A, 0.5/700 generator, Figure 3 test
circuit (See Figure 2)
V
F
> 5 V
V
F
> 1 V
1
10000
μs
I
H
Holding current
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -50 V,
TISPPBL1
TISPPBL2
-105
-150
mA
I
GAS
Gate reverse current
V
GG
= V
GKRM
, V
AK
= 0
T
J
= -40 °C
T
J
= 85 °C
-5
μA
-50
μA
I
GAT
Gate reverse current,
on state
I
T
= -0.5 A, t
w
= 500 μs, V
GG
= -50 V, T
A
= 25 °C
-1
mA
I
GAF
Gate reverse current,
forward conducting
state
I
F
= 1 A, t
w
= 500 μs, V
GG
= -50 V, T
A
= 25 °C
-10
mA
I
GT
V
GT
Gate trigger current
I
T
= -5 A, t
p(g)
≥
20 μs, V
GG
= -50 V, T
A
= 25 °C
I
T
= -5 A, t
p(g)
≥
20 μs, V
GG
= -50 V, T
A
= 25 °C
5
mA
Gate trigger voltage
2.5
V
C
AK
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, T
A
= 25 °C
(see Note 3)
V
D
= -3 V
V
D
= -50 V
110
pF
60
pF
NOTE
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25 °C
5 cm
2
, FR4 PCB
D Package
160
°C/W
P Package
100
相關(guān)PDF資料
PDF描述
TISPPBL2D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2SD PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
TISPPBL2SDR PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
TK10415 CERAMIC SPEAKER DRIVE AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISPPBL1P-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1SE 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1SE-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL2P 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL2PS 制造商:Bourns Inc 功能描述:
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