參數(shù)資料
型號： TISP8250D
廠商： BOURNS INC
元件分類： 晶閘管
英文描述： UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR
中文描述： 250 V, SCR, MS-012AA
封裝： SOIC-8
文件頁數(shù)： 2/4頁
文件大?。?/td> 183K
代理商： TISP8250D
JULY 2000 - REVISED MARCH 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
TISP8250D Overvoltage and Overcurrent Protector
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Thermal Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Rating
Symbol
V
DRM
Value
250
Unit
V
Repetitive peak off-state voltage (see Note 1)
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
2/10
μ
s (Telcordia GR-1089-CORE, 2/10
μ
s waveshape)
0.2/310 (CNET I 31-24, 0.5/700
μ
s waveshape)
5/310
μ
s (ITU-T K.20/21, 10/700
μ
s voltage waveshape)
5/310
μ
s (FTZ R12, 10/700
μ
s voltage waveshape)
10/1000
μ
s (Telcordia GR-1089-CORE, 10/1000
μ
s voltage waveshape)
Non-repetitive peak on-state current, 50 Hz (see Notes 2, 3 and 4)
10 ms half sine wave
1s rectified sine wave
1000 s rectified sine wave
Junction temperature
Storage temperature range
I
PPSM
75
40
40
40
30
A
I
TSM
5
3.5
0.7
A
T
J
T
stg
-40 to +150
-65 to +150
°
C
°
C
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/
°
C.
2. Initially the device must be in thermal equilibrium, with T
J
= 25
°
C.
3. The surge may be repeated after the device returns to its initial condtions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A printed wiring track
widths. Derate current values at -0.61 %/
°
C for ambient temperatures above 25
°
C.
Test Conditions
Min Typ Max Unit
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
T
A
= 25
°
C
T
A
= 85
°
C
5
10
340
200
μ
A
V
(BO)
I
(BO)
I
H
V
GK
I
GT
I
D
C
O
Breakover voltage
Breakover current
Holding current
Gate-cathode voltage
Gate trigger current
Off-state current
Off-state capacitance
dv/dt = 250 V/ms, R
SOURCE
= 300
dv/dt = 250 V/ms, R
SOURCE
= 300
I
T
= 5 A, di/dt = -30 mA/ms
I
G
= 30 mA
V
AK
= 100 V
V
D
= 60 V
f = 1 MHz, V
d
= 1 V rms, V
D
= 5 V
V
15
180
0.6
mA
mA
V
mA
μ
A
pF
1.2
40
5
100
Test Conditions
Min Typ Max
Unit
R
θ
JA
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 5)
170
°
C/W
NOTE
5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5A rated printed wiring track widths.
相關PDF資料
PDF描述
TISP8250DR UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR
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相關代理商/技術參數(shù)
參數(shù)描述
TISP8250DR 制造商:Bourns Inc 功能描述:
TISP8250DR-S 功能描述:SCR PROTECTOR - GATED UNIDIRECTIONAL RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP83121D 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP83121DR 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP83121DR-S 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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