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參數(shù)資料
| 型號(hào)： | TISP8250DR |
| 廠商： | BOURNS INC |
| 元件分類： | 晶閘管 |
| 英文描述： | UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR |
| 中文描述： | 250 V, SCR, MS-012AA |
| 封裝： | SOIC-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | TISP8250DR |
JULY 2000 - REVISED MARCH 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8250D Overvoltage and Overcurrent Protector
TISP8250D
UNIDIRECTIONAL P-GATE THYRISTOR
OVERVOLTAGE AND OVERCURRENT PROTECTOR
Device Symbol
Telecommunication System 30 A 10/1000 Protector
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Rated for International Surge Wave Shapes
How To Order
8-SOIC Package (Top View)
Description
The TISP8250D is a P-gate reverse-blocking thyristor (SCR) designed for the protection of telecommunications equipment against
overvoltages and overcurrents on the telephone line caused by lightning, a.c. power contact and induction. The fixed voltage and current
triggered modes make the TISP8250D particularly suitable for the protection of ungrounded customer premise equipment. Connected
across the d.c. side of a telephone set polarity bridge, in fixed voltage mode these devices can protect the ringer in the on-hook condition.
In an off-hook condition, either the fixed voltage or current triggered modes can protect the following telephone electronics.
Without external gate activation, the TISP8250D is a fixed voltage protector. The maximum working voltage without clipping is 250 V and
the protection voltage is 340 V. Lower values of protection voltage may be set by connecting an avalanche breakdown diode of less than
250 V between the TISP8250D gate and anode (see Figure 2.)
By connecting a small value resistor in series with the line conductor and connecting the TISP8250D gate cathode terminals in parallel with
the resistor, conductor overcurrents can gate trigger the TISP8250D into conduction.
Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar
into a low-voltage on state. Overcurrents develop sufficient voltage across the external gate-cathode resistor to trigger the device into a
low-voltage on state. This low-voltage on state causes the current resulting from the overstress to be safely diverted through the device.
The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
Functional Replacement for TPP25011
Device Name
V
DRM
V
250
V
(BO)
V
340
TISP8250D
Wave Shape
Standard
I
PPSM
A
75
40
40
30
2/10
0.5/700
10/700
10/1000
GR-1089-CORE
CNET I 31-24
ITU-T K.20/21
GR-1089-CORE
MD8XAAA
1
2
3
4
5
6
7
8
A
A
A
A
NC
G
K
NC
NC - No internal connection
K
G
SD8XAA
A
.............................................. UL Recognized Component
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device
Package
Carrier
TISP8250D
8-SOIC
Embossed Tape Reeled
Tube
TISP8250DR
TISP8250D
TISP8250DR-S
TISP8250D-S
8250
2500
1500
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
Marking
Code
Standard
Quantity
*RHAVALABE
VRSONS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP8250DR-S | UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR |
| TISP8250D-S | UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR |
| TISPPBL3 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
| TISPPBL3D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
| TISPPBL3DR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8250DR-S | 功能描述:SCR PROTECTOR - GATED UNIDIRECTIONAL RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121D | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121DR | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121DR-S | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121D-S | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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