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| 型號： | TISP7XXXF3 |
| 廠商： | Bourns Inc. |
| 英文描述： | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 介質(zhì) |
| 文件頁數(shù)： | 2/19頁 |
| 文件大?。?/td> | 562K |
| 代理商： | TISP7XXXF3 |
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (continued)
Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They
are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of
58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0
°
C < T
A
< 70
°
C
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
V
DRM
100
120
145
180
200
220
240
275
270
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0
°
C < T
A
< 70
°
C (see Notes 1 and 3)
50 Hz,
1 s
I
PPSM
A
330
190
100
175
110
95
70
70
70
50
45
D Package
SL Package
I
TSM
4.3
7.1
250
A
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
T
J
T
stg
A/
μ
s
°
C
°
C
-65 to +150
-65 to +150
NOTES: 1.
2. See Thermal Information for derated I
PPSM
values 0
°
C < T
A
< 70
°
C and Applications Information for details on wave shapes.
3. Above 70
°
C, derate I
TSM
linearly to zero at 150
°
C lead temperature.
Initially, the TISP device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP device
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP7XXXH3SL | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP8200HDMR-S | 功能描述:SCR Buffered P-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8200MDR | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8200MDR-S | 功能描述:SCR PROTECTOR - BUFFERED P-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201HDMR-S | 功能描述:SCR Buffered N-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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