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參數(shù)資料
| 型號： | TISP7XXXF3 |
| 廠商： | Bourns Inc. |
| 英文描述： | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 介質(zhì) |
| 文件頁數(shù)： | 13/19頁 |
| 文件大小： | 562K |
| 代理商： | TISP7XXXF3 |
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Thermal Information
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Rating
Symbol
Value
Unit
Non-repetitive peak on-state pulse current, 0
°
C < T
A
< 70
°
C (see Notes 5, 6 and 7)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
I
PPSM
A
320
175
90
150
90
70
65
65
65
45
40
NOTES: 5.
6. See Applications Information for details on wave shapes.
7. Above 70
°
C, derate I
PPSM
linearly to zero at 150
°
C lead temperature.
Initially, the TISP device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP device
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
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| TISP7350F3D | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7350F3DR | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7350F3DR-S | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7350F3D-S | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7350F3SL | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TISP7XXXH3SL | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP8200HDMR-S | 功能描述:SCR Buffered P-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8200MDR | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8200MDR-S | 功能描述:SCR PROTECTOR - BUFFERED P-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201HDMR-S | 功能描述:SCR Buffered N-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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