
5
JULY 1995 - REVISED SEPTEMBER 1997
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
APPLICATIONS INFORMATION
electrical characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction
temperature, T
J
. Hence a characteristic value will depend on the junction temperature at the instant of
measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.
application circuit
Figure 3 shows a typical TISP6151xx SLIC card protection circuit. The incoming line wires, R and T, connect
to the relay matrix via the series over-current protection. Fusible resistors, fuses and positive temperature
coefficient (PTC) resistors can be used for over-current protection. Resistors will reduce the prospective
current from the surge generator for both the TISP6151xx and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration maybe ground or battery-backed. For dedicated ground-backed ringing generators, the
TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP6151xx protector. The protector gate
reference voltage comes from the SLIC negative supply (V
BAT
). A 220 nF gate capacitor sources the high
gate current pulses caused by fast rising impulses.
TISP61511D, TISP61512P PARAMETER
DATA SHEET
SYMBOL
I
TSP
ALTERNATIVE
SYMBOL
I
PP
I
R
I
RM
I
RG
V
R
V
RM
V
FP
V
SGL
V
gate
V
GATE
V
S
V
MLG
V
MGL
V
GL
V
DGL
V
LG
V
GND/LINE
C
off
Tip
Ring
GND
Gate
R
th
(j-a)
ALTERNATIVE PARAMETER
Non-repetitive peak on-state pulse current
Peak pulse current
Off-state current
I
D
Reverse leakage current LINE/GND
Gate reverse current (with A and K terminals connected)
I
GAS
Reverse leakage current GATE/LINE
Off-state voltage
V
D
Reverse voltage LINE/GND
Peak forward recovery voltage
Breakover voltage
V
FRM
V
(BO)
Peak forward voltage LINE/GND
Dynamic switching voltage GND/LINE
Gate voltage, (V
GG
is gate supply voltage referenced
to the A terminal)
V
G
GATE/GND voltage
Repetitive peak off-state voltage
Repetitive peak gate-cathode voltage
Gate-cathode voltage
Gate-cathode voltage at breakover
V
DRM
V
GKM
V
GK
V
GK(BO)
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
GATE/LINE voltage
Dynamic switching voltage GATE/LINE
Cathode-anode voltage
V
K
LINE/GND voltage
Anode-cathode capacitance
Cathode 1 terminal
Cathode 2 terminal
Anode terminal
Gate terminal
Thermal Resistance, junction to ambient
C
AK
K1
K2
A
G
R
θ
JA
Off-state capacitance LINE/GND
Tip terminal
Ring terminal
Ground terminal
Gate terminal
Thermal Resistance, junction to ambient