參數(shù)資料
型號(hào)： TISP61512P
廠商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過壓保護(hù)
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 210K
代理商： TISP61512P
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
≤
T
J
≤
85°C, unless otherwise specified. The surge may be
repeated after the device returns to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied to either the R-G or T-G terminal pairs. Additionally, both terminal pairs may have their
rated current values applied simultaneously (in this case the G terminal current will be twice the rated current value of an individual
terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
absolute maximum ratings
RATING
SYMBOL
V
DRM
V
GKRM
VALUE
-100
-85
UNIT
V
V
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 μs
5/310 μs
0.2/310 μs
1/20 μs
2/10 μs
I
TSP
A
30
40
40
90
120
170
T
J
= -40°C
T
J
= 25, 85°C
Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)
full-sine-wave, 20 ms
1 s
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
Junction temperature
Storage temperature range
I
TSM
A
5
3.5
2
I
GSM
T
J
T
stg
A
°C
°C
-55 to +150
-55 to +150
recommended operating conditions
MIN
TYP
220
MAX
UNIT
nF
C
G
Gate decoupling capacitor
electrical characteristics, T
J
= 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
μA
μA
V
I
D
Off-state current
V
D
= -85 V, V
GK
= 0 V
T
J
= 25°C
T
J
= 70°C
5
50
-58
10
20
25
V
(BO)
Breakover voltage
I
T
= 30 A, 10/1000 μs, 1 kV, R
S
= 33
, di/dt
(i)
= 8 A/μs (see Note 3)
I
T
= 30 A, 10/700 μs, 1.5 kV, R
S
= 10
, di/dt
(i)
= 14 A/μs (see Note 3)
I
T
= 30 A, 1.2/50 μs, 1.5 kV, R
S
= 10
, di/dt
(i)
= 70 A/μs (see Note 3)
I
T
= 38 A, 2/10 μs, 2.5 kV, R
S
= 61
, di/dt
(i)
= 40 A/μs (see Note 3)
I
T
= 0.5 A, t
w
= 500 μs
I
T
= 3 A, t
w
= 500 μs
I
F
= 5 A, t
w
= 500 μs
I
F
= 30 A, 10/1000 μs, 1 kV, R
S
= 33
, di/dt
(i)
= 8 A/μs (see Note 3)
I
T
= 30 A, 10/700 μs, 1.5 kV, R
S
= 10
, di/dt
(i)
= 14 A/μs (see Note 3)
I
T
= 30 A, 1.2/50 μs, 1.5 kV, R
S
= 10
, di/dt
(i)
= 70 A/μs (see Note 3)
I
T
= 38 A, 2/10 μs, 2.5 kV, R
S
= 61
, di/dt
(i)
= 40 A/μs (see Note 3)
I
T
= 1 A, di/dt = -1A/ms, V
GG
= -48 V
V
GK(BO)
Gate-cathode voltage
at breakover
V
V
T
On-state voltage
3
4
3
5
5
7
V
V
F
Forward voltage
V
V
FRM
Peak forward recovery
voltage
12
V
I
H
Holding current
150
mA
μA
μA
mA
V
I
GAS
Gate reverse current
V
GG
= -75 V, K and A terminals connected
T
J
= 25°C
T
J
= 70°C
5
50
I
GT
V
GT
Gate trigger current
Gate trigger voltage
I
T
= 3 A, t
p(g)
≥
20 μs, V
GG
= -48 V
I
T
= 3 A, t
p(g)
≥
20 μs, V
GG
= -48 V
0.2
5
2.5
NOTE
3: All tests have C
G
= 220 nF and V
GG
= -48 V. R
S
is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
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