參數(shù)資料
型號(hào)： TISP61511D
廠商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過壓保護(hù)
文件頁數(shù)： 5/11頁
文件大?。?/td> 210K
代理商： TISP61511D
5
JULY 1995 - REVISED SEPTEMBER 1997
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
APPLICATIONS INFORMATION
electrical characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction
temperature, T
J
. Hence a characteristic value will depend on the junction temperature at the instant of
measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.
application circuit
Figure 3 shows a typical TISP6151xx SLIC card protection circuit. The incoming line wires, R and T, connect
to the relay matrix via the series over-current protection. Fusible resistors, fuses and positive temperature
coefficient (PTC) resistors can be used for over-current protection. Resistors will reduce the prospective
current from the surge generator for both the TISP6151xx and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration maybe ground or battery-backed. For dedicated ground-backed ringing generators, the
TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP6151xx protector. The protector gate
reference voltage comes from the SLIC negative supply (V
BAT
). A 220 nF gate capacitor sources the high
gate current pulses caused by fast rising impulses.
TISP61511D, TISP61512P PARAMETER
DATA SHEET
SYMBOL
I
TSP
ALTERNATIVE
SYMBOL
I
PP
I
R
I
RM
I
RG
V
R
V
RM
V
FP
V
SGL
V
gate
V
GATE
V
S
V
MLG
V
MGL
V
GL
V
DGL
V
LG
V
GND/LINE
C
off
Tip
Ring
GND
Gate
R
th
(j-a)
ALTERNATIVE PARAMETER
Non-repetitive peak on-state pulse current
Peak pulse current
Off-state current
I
D
Reverse leakage current LINE/GND
Gate reverse current (with A and K terminals connected)
I
GAS
Reverse leakage current GATE/LINE
Off-state voltage
V
D
Reverse voltage LINE/GND
Peak forward recovery voltage
Breakover voltage
V
FRM
V
(BO)
Peak forward voltage LINE/GND
Dynamic switching voltage GND/LINE
Gate voltage, (V
GG
is gate supply voltage referenced
to the A terminal)
V
G
GATE/GND voltage
Repetitive peak off-state voltage
Repetitive peak gate-cathode voltage
Gate-cathode voltage
Gate-cathode voltage at breakover
V
DRM
V
GKM
V
GK
V
GK(BO)
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
GATE/LINE voltage
Dynamic switching voltage GATE/LINE
Cathode-anode voltage
V
K
LINE/GND voltage
Anode-cathode capacitance
Cathode 1 terminal
Cathode 2 terminal
Anode terminal
Gate terminal
Thermal Resistance, junction to ambient
C
AK
K1
K2
A
G
R
θ
JA
Off-state capacitance LINE/GND
Tip terminal
Ring terminal
Ground terminal
Gate terminal
Thermal Resistance, junction to ambient
相關(guān)PDF資料
PDF描述
TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61CAP3 PROGRAMMABLE OVERVOLTAGE PROTECTOR
TISP7070H3SL TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP61511DR 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61511DR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61511DS 制造商:Bourns Inc 功能描述:
TISP61511D-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61512P 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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