參數(shù)資料
型號(hào): TISP61511D
廠商: Power Innovations International, Inc.
英文描述: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述: 雙遠(yuǎn)期導(dǎo)電的P -可編程門(mén)晶閘管過(guò)壓保護(hù)
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 210K
代理商: TISP61511D
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
4
P R O D U C T I N F O R M A T I O N
DEVICE PARAMETERS
general
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and
their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,
rather than its application usage as a single device may have many applications each using a different
terminology for circuit connection.
alternative symbol cross-reference guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in
some cases the alternative symbols have no substance in international standards and are not fully defined by
the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this
guide.
THERMAL INFORMATION
Figure 2.
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·1
1
10
100
1000
I
T
1
10
TI6LAA
V
GEN
= 250 Vrms
R
GEN
= 10 to 150
TISP61511D
TISP61512P
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP61511DR 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61511DR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61511DS 制造商:Bourns Inc 功能描述:
TISP61511D-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61512P 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube