參數(shù)資料
型號(hào)： TISP61089ASD
廠商： BOURNS INC
元件分類： 保護(hù)電路
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述： TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝： SOP-8
文件頁數(shù)： 3/8頁
文件大?。?/td> 259K
代理商： TISP61089ASD
NOVEMBER 1995 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089 Gated Protector Series
Recommended Operating Conditions
Component
Min
Typ
Max
Unit
C
G
Gate decoupling capacitor
100
220
nF
R
S
Series resistor for GR-1089-CORE first-level surge survival
25
Series resistor for GR-1089-CORE first-level and second-level surge survival
40
Series resistor for GR-1089-CORE intra-building port surge survival
8
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
10
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= 25
°
C
T
J
= 85
°
C
-5
μ
A
-50
μ
A
V
(BO)
Breakover voltage
2/10
μ
s, I
PP
= -56 A, R
S
= 45
, V
GG
= -48 V, C
G
= 220 nF
2/10
μ
s, I
PP
= -100 A, R
S
= 50
, V
GG
= -48 V, C
G
= 220 nF
1.2/50
μ
s, I
PP
= -53 A, R
S
= 47
, V
GG
= -48 V, C
G
= 220 nF
1.2/50
μ
s, I
PP
= -96 A, R
S
= 52
, V
GG
= -48 V, C
G
= 220 nF
2/10
μ
s, I
PP
= -56 A, R
S
= 45
, V
GG
= -48 V, C
G
= 220 nF
2/10
μ
s, I
PP
= -100 A, R
S
= 50
, V
GG
= -48 V, C
G
= 220 nF
1.2/50
μ
s, I
PP
= -53 A, R
S
= 47
, V
GG
= -48 V, C
G
= 220 nF
1.2/50
μ
s, I
PP
= -96 A, R
S
= 52
, V
GG
= -48 V, C
G
= 220 nF
I
F
= 5 A, t
w
= 200
μ
s
2/10
μ
s, I
PP
= 56 A, R
S
= 45
, V
GG
= -48 V, C
G
= 220 nF
2/10
μ
s, I
PP
= 100 A, R
S
= 50
, V
GG
= -48 V, C
G
= 220 nF
1.2/50
μ
s, I
PP
= 53 A, R
S
= 47
, V
GG
= -48 V, C
G
= 220 nF
1.2/50
μ
s, I
PP
= 96 A, R
S
= 52
, V
GG
= -48 V, C
G
= 220 nF
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -48 V
-57
-60
-60
-64
V
V
GK(BO)
Gate-cathode impulse
breakover voltage
9
12
12
16
V
V
F
Forward voltage
3
V
V
FRM
Peak forward recovery
voltage
6
8
8
12
V
I
H
Holding current
-150
mA
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
J
= 25
°
C
T
J
= 85
°
C
-5
μ
A
-50
μ
A
I
GT
Gate trigger current
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -48 V
5
mA
V
GT
Gate-cathode trigger
voltage
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -48 V
2.5
V
Q
GS
Gate switching charge
1.2/50
μ
s, I
PP
= -53 A, R
S
= 47
, V
GG
= -48 V, C
G
= 220 nF
0.1
μ
C
C
KA
Cathode-anode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 3)
V
D
= -3 V
V
D
= -48 V
100
pF
50
pF
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to free air thermal resistance
T
A
= 25
°
C, EIA/JESD51-3
PCB, EIA/JESD51-2
environment, P
TOT
= 1.7 W
D Package
120
°
C/W
相關(guān)PDF資料
PDF描述
TISP61089D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP6NTP2A QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
TISP7015 Three Terminal Very Low Voltage (VLV) Protection
TISP7015D Three Terminal Very Low Voltage (VLV) Protection
TISP7015DR Three Terminal Very Low Voltage (VLV) Protection
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP61089ASDR 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089ASDR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089ASDS 制造商:Bourns Inc 功能描述:
TISP61089ASD-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089B 制造商:Bourns Inc 功能描述:THYRISTOR TVS DUAL
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