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參數(shù)資料
| 型號： | TISP4400H3 |
| 廠商： | Bourns Inc. |
| 英文描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙向可控硅過電壓保護器 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 367K |
| 代理商： | TISP4400H3 |
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Rating
Symbol
Value
±
58
±
65
±
75
±
90
±
100
±
120
±
135
±
145
±
155
±
160
±
180
±
190
±
200
±
220
±
230
±
275
±
320
±
300
Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
μ
s (GR-1089-CORE, 2/10
μ
s voltage wave shape)
8/20
μ
s (IEC 61000-4-5, 1.2/50
μ
s voltage, 8/20 current combination wave generator)
10/160
μ
s (FCC Part 68, 10/160
μ
s voltage wave shape)
5/200
μ
s (VDE 0433, 10/700
μ
s voltage wave shape)
0.2/310
μ
s (I3124, 0.5/700
μ
s voltage wave shape)
5/310
μ
s (ITU-T K.20/21, 10/700
μ
s voltage wave shape)
5/310
μ
s (FTZ R12, 10/700
μ
s voltage wave shape)
10/560
μ
s (FCC Part 68, 10/560
μ
s voltage wave shape)
10/1000
μ
s (GR-1089-CORE, 10/1000
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I
TSP
A
500
300
250
220
200
200
200
160
100
I
TSM
55
60
2.1
400
A
di
T
/dt
T
J
T
stg
A/
μ
s
°
C
°
C
-40 to +150
-65 to +150
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, he TISP4xxxH3BJ must be in thermal equilibrium with T
J
= 25
°
C.
3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/
°
C for ambient
temperatures above 25
°
C.
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP4400H3BJ | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4400H3BJR | 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4400H3BJRS | 功能描述:SURGE SUPP 300V BIDIR DO-214AA RoHS:否 類別:過電壓，電流，溫度裝置 >> TVS - 晶閘管 系列:- 產(chǎn)品變化通告:Product Discontinuation 19/Jul/2012 標(biāo)準(zhǔn)包裝:2,500 系列:- 電壓 - 擊穿:400V 電壓 - 斷路:320V 電壓 - 導(dǎo)通狀態(tài):4V 電流 - 峰值脈沖(8 x 20µs):250A 電流 - 峰值脈沖(10 x 1000µs):80A 電流 - 保持 (Ih):150mA 元件數(shù):1 電容:29pF 封裝/外殼:DO-214AA，SMB 包裝:帶卷 (TR) |
| TISP4400H3BJR-S | 功能描述:硅對稱二端開關(guān)元件 PROTECTOR - SINGLE BIDIRECTIONAL RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4400H3LM | 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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