參數(shù)資料
型號(hào): TIM7785-4UL
廠商: Toshiba Corporation
英文描述: MICROWAVE POWER GaAs FET
中文描述: 微波功率GaAs場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 80K
代理商: TIM7785-4UL
4
TIM7785-4UL
0
0
1
0
0
20
30
0
40
80
1
20
1
60
200
)
Tc (
P
T
POWER DISSIPATION vs. CASE TEMPERATURE
-60
-50
-40
-30
-20
2
1
23
Po(dBm), Single Carrier Level
25
27
29
3
1
I
V
DS
= 10V
I
DS
1.1A
f= 8.1GHz
f= 5MHz
IM
3
vs. OUTPUT POWER CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIM7785-4UL_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
TIM7785-60SL 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET
TIM7785-60SL_08 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
TIM7785-60ULA 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,51W,PD 187.5W - Trays
TIM7785-6UL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,32W - Trays