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參數(shù)資料
| 型號(hào)： | THN6501Z |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 242K |
| 代理商： | THN6501Z |
THN6501 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 6 V, I
C
= 15 mA, f = 1 GHz
Symbol
Parameter
Test Condition
Unit
|S
21
|
2
h
FE
DC Current Gain
V
CE
= 3 V, I
C
= 15 mA
V
CB
= 19 V, I
E
= 0 mA
Value
0.5
V
CE
= 3 V, I
C
= 30 mA
Collector Cut-off Current
11
14.5
Min.
Typ.
I
CBO
I
CEO
Minimum Noise Figure
Noise Resistance
rn
NFmin
I
EBO
MAG
Insertion Power Gain
Associated Gain
G
A
Emitter Cut-off Current
f
T
Transition Frequency
C
CB
Collector to Base Capacitance
80
150
0.85
Maximum Available Gain
V
CB
= 10 V, f = 1 MHz
9
9.5
12.5
13
8
OIP
3
Output 3rd Order Intercept
dB
15
1.0
0.049
12
12.5
27
10
uA
dBm
dB
Max.
pF
uA
5
0.5
uA
300
GHz
dB
dB
10
8
9
www.tachyonics.co.kr
- 2/15 -
Aug.-2005
Rev 2.0
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| THN6501 | NPN SiGe RF TRANSISTOR |
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| THN6501U | NPN SiGe RF TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| THN6701B | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6702F | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THNBDW_Z08TNS WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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