參數(shù)資料
型號(hào): THN6501U
廠商: Tachyonics CO,. LTD.
英文描述: NPN SiGe RF TRANSISTOR
中文描述: npn型硅鍺射頻晶體管
文件頁(yè)數(shù): 5/15頁(yè)
文件大?。?/td> 242K
代理商: THN6501U
THN6501 Series
Output 3rd Order Intercept Point,
OIP
3
vs. I
C
(Z
S
= Z
L
= 50
)
C
CB
vs. V
CB
NF vs. I
C
V
CE
= 3 V, I
C
= parameter, Z
S
= Z
Sopt
Noise Figure Contours & Constant Gain
f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
35
40
45
50
55
N
0
0.4
0.8
1.2
1.6
0
5
10
V
CB
[V]
15
20
C
C
Γ
OPT
=0.445∠15
5
NF=1.0dB
=1.1dB
=1.2dB
=1.3dB
Input Stable
Output Stable
G
A
=15dB
=14dB
=13dB
=12dB
=11dB
5 contour
f = 1 MHz
f = 1 GHz
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
O
3
V
CE
= 6 V
f = 1 GHz
V
CE
= 3 V
V
CE
= 2 V
I
C
[mA]
I
C
www.tachyonics.co.kr
- 5/15 -
Aug.-2005
Rev 2.0
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