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參數(shù)資料
| 型號： | THN6501S |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN Planer RF TRANSISTOR |
| 中文描述： | npn型刨射頻晶體管 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 134K |
| 代理商： | THN6501S |
THN6501S
Electrical Characteristics
( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C Current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
dB
dB
dB
pF
Unit
100
100
VALUE
PARAMETER
CONDITION
SYMBOL
PARAMETER
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
dBm
9.5
dB
14.5
1.0
0.056
12
12.5
27
G
A
OIP
3
V
CE
=3V, Ic=15mA,f=1GHz
V
CE
=6V, Ic=15mA,f=1GHz
V
CE
=3V, Ic=7mA,f=1GHz
VALUE
Unit
20
12
25
13
V
V
GHz
n A
n A
rn
[S21]
2
V
CE
=3V, Ic=7mA,f=1GHz
V
CE
=3V, Ic=7mA,f=1GHz
NFmin
11
14
V
CE
= 3V, Ic = 7mA
V
CE
= 3V, Ic = 7mA
V
CB
= 10V, f = 1MHz
0.90
130
5
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
f
T
C
CB
Noise Resistance
Associated Gain
Minimum Noise Figure
CONDITION
Insertion Power Gain
V
CE
=3V, Ic=7mA,f=1GHz
V
CE
=3V, Ic=15mA,f=1GHz
MSG
MAG
Maximum Stable Gain
Maximum Available Gain
V
CE
=3V, Ic=7mA,f=1GHz
Output 3rd Intercept
V
CE
=3V, Ic=15mA,f=1GHz
www.tachyonics.co.kr
Aug-25-2003
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| THN6501U | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6501Z | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6601B | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SiGe RF TRANSISTOR |
| THN6701B | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6702F | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
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