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參數(shù)資料
| 型號(hào)： | THN5601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 100K |
| 代理商： | THN5601B |
THN5601B
□
APPLICATION INFORMATION (I)
RF performance at Ts
≤
60
℃
in common emitter test circuit (see Fig 7)
Fig 3. Power gain and collector efficiency v.s
load power (typical value)
Fig 4. Load power v.s input power (typical value)
●
Typical Large Signal Impedance
V
CE
= 4.8V, I
CQ
= 5mA, Pout = 28dBm
G
P
[dB]
η
C
[%]
≥
7
70
Mode of Operation
CW, class-AB
f [MHz]
900
4.8
600
V
CE
[V]
P
L
[mW]
Γ
load
Γ
source
Freq.[MHz]
800
820
840
860
880
900
920
940
960
0.615
0.631
0.65
0.666
0.682
0.698
-162.5
-164.0
-165.9
-167.6
-169.5
-171.2
0.460
0.478
0.494
0.509
0.524
161.4
159.6
158.0
156.2
154.0
Mag
Ang
Mag
Ang
0.538
0.550
0.563
0.578
151.9
150.0
147.3
145.0
142.8
140.3
0.711
0.724
0.735
-172.7
-174.5
-175.9
980
1000
0.746
0.760
-177.6
-179.3
0.593
0.600
0
2
4
6
8
10
8
12
17
21
25
28
30
0
20
40
60
80
100
2
6
10
14
18
22
26
30
0
4
8
12
16
20
24
f=900MHz; V
CE
=4.8V; I
CQ
=5mA; Ts < 60℃
P
L
[dBm]
f=900MHz; V
CE
=4.8V; I
CQ
=5mA; Ts < 60℃
G
p
[dB]
Pin[dBm]
P
L
[dBm]
η C [%]
www.tachyonics.co.kr
- 4/7 -
Mar-22-2005
Rev 1.2
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