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參數(shù)資料
| 型號(hào)： | THN4201E |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 237K |
| 代理商： | THN4201E |
THN4201 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
V
CE
= 6 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
dB
-
-
-
-
-
rn
Noise Resistance
0.04
-
0.05
-
-
Symbol
Parameter
Test Condition
Unit
1.5
-
-
dB
7.5
-
-
dB
MAG
Maximum Available Gain
10.3
dB
9.5
GHz
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
16.5
pF
Collector Cut-off Current
V
CB
= 10 V, I
E
= 0 mA
Transition Frequency
V
CE
= 3 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 15 mA
Emitter Cut-off Current
DC Current Gain
8
I
CEO
I
EBO
h
FE
f
T
NFmin
I
CBO
7
-
-
-
-
C
CB
|S
21
|
2
G
A
Associated Gain
0.48
Minimum Noise Figure
Insertion Power Gain
1.7
5
-
-
-
-
80
200
0.5
300
-
0.5
Max.
Min.
Typ.
Value
uA
uA
uA
8.4
-
7.5
6
8.5
8
-
-
-
-
www.tachyonics.co.kr
- 2/12 -
March-2006
Rev 1.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| THN4201KF | NPN SiGe RF TRANSISTOR |
| THN4201U | NPN SiGe RF TRANSISTOR |
| THN4201Z | NPN SiGe RF TRANSISTOR |
| THN5601B | NPN SiGe RF POWER TRANSISTOR |
| THN5601SF | NPN SiGe RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THN4201KF | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SiGe RF TRANSISTOR |
| THN4201U | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN4201Z | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN420Z | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN4301E | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
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