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參數(shù)資料
| 型號(hào)： | THN4201Z |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | THN4201Z |
THN4201 Series
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Gain
MAG = 10.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 20 mA
MAG = 8.5 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Transition Frequency
f
T
= 16.5 GHz Typ. @ V
CE
= 3 V, I
C
= 20 mA
Pin Configuration
Pin No
1
2
3
□
Available Package
Product
THN4201U
THN4201Z
THN4201E
THN4201KF
□
h
FE
Classification
Marking
h
FE
□
Absolute Maximum Ratings
Caution : ESD sensitive device
Unit : mm
Dimension
2.0
ⅹ
1.25, 1.0t
2.0
ⅹ
1.25, 1.0t
1.6
ⅹ
0.8, 0.8t
SOT623F
1.4
ⅹ
0.8, 0.6t
SOT323
SOT343
SOT523
Package
E
C
Emitter
Collector
Symbol
B
Description
Base
150
mW
℃
℃
2.5
35
150
-65 ~ 150
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
V
V
V
15
6
AG1
AG2
125 to 300 80 to 160
Unit
Ratings
mA
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/12 -
March-2006
Rev 1.0
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