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參數(shù)資料
| 型號： | THM72V2010AG-60 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| 中文描述： | 2097152字× 72位動態(tài)RAM模塊 |
| 文件頁數(shù)： | 7/30頁 |
| 文件大?。?/td> | 1861K |
| 代理商： | THM72V2010AG-60 |
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DM16050295
Standard DRAM
THM72V2010AG/ATG-60/70
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC
.
7
PRELIMINARY
Electrical Characteristics and Recommended AC Operating Conditions (Cont)
SYMBOL
PARAMETER
THMxxxxxx-60
THMxxxxxx-70
UNIT
NOTES
MIN
MAX
MIN
MAX
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data Set-Up Time
Data Hold Time
Refresh Period
Write Command Set-Up Time
CAS to WE Delay Time
RAS to WE Delay Time
Column Address to WE Delay Time
CAS Precharge to WE Delay Time
CAS Set-Up Time
(CAS before RAS Cycle)
CAS Hold Time
(CAS before RAS Cycle)
RAS to CAS Precharge Time
CAS Precharge Time
(CAS before RAS Counter Test Cycle)
RAS Hold Time Referenced to OE
OE Access Time
OE to Data Delay
OE to Output in Low-Z
Output buffer turn off Delay Time from OE
OE Command Hold Time
Output Disable Set-Up Time
Write Command Set-Up Time (Test Mode In)
Write Command Hold Time (Test Mode In)
WE to RAS Precharge Time (CAS before RAS Cycle)
WE to RAS Hold Time (CAS before RAS Cycle)
PDE to Presence Detect Data in Low-Z
Presence Detect Data turn off Delay Time from PDE
10
20
15
0
15
-
0
50
90
65
70
-
-
-
-
-
15
25
20
0
20
-
0
55
100
70
75
-
-
-
-
-
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
12
12
32
-
-
-
-
-
32
-
-
-
-
-
13
13
13
13
13
t
CSR
10
-
10
-
ns
t
CHR
10
-
15
-
ns
t
RPC
5
-
5
-
ns
t
CPT
20
-
30
-
ns
t
ROH
t
OEA
t
OED
t
OLZ
t
OEZ
t
OEH
t
ODS
t
WTS
t
WTH
t
WRP
t
WRH
t
PD
t
PDOFF
15
-
20
0
0
15
0
15
10
15
10
-
1
-
15
-
20
0
0
15
0
15
10
15
10
-
1
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
25
-
-
-
-
20
-
-
-
-
-
-
10
-
20
-
-
-
-
-
-
10
-
10
相關(guān)PDF資料 |
PDF描述 |
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| THM72V2010AG-70 | 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| THM72V2010ATG-60 | 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| THM72V2010ATG-70 | 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| THMR1E8-8 | 67，108，864-Word（128MBytes) by 18-Bit(64M-Word × 18Bit)Direct Rambus DRAM Module(I/O Frequency:800MHz）(128M字節(jié)(64M字× 18位)直接Rambus 動態(tài)RAM模塊(I/O 頻率:800MHz）) |
| THMR1E8-6 | 67，108，864-Word（128MBytes) by 18-Bit(64M-Word × 18Bit)Direct Rambus DRAM Module(I/O Frequency:600MHz）(128M字節(jié)(64M字× 18位)直接Rambus 動態(tài)RAM模塊(I/O 頻率:600MHz）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THM72V2010AG-70 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| THM72V2010ATG-60 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| THM72V2010ATG-70 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE |
| THM84000L-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 WORDSx8 BIT DYNAMIC RAM MODULE |
| THM84000L-80 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4,194,304 WORDSx8 BIT DYNAMIC RAM MODULE |
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