參數(shù)資料
型號(hào): THM72V2010AG-60
廠商: Toshiba Corporation
英文描述: 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
中文描述: 2097152字× 72位動(dòng)態(tài)RAM模塊
文件頁數(shù): 6/30頁
文件大?。?/td> 1861K
代理商: THM72V2010AG-60
THM72V2010AG/ATG-60/70
Standard DRAM
DM16050295
6
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC
.
PRELIMINARY
Electrical Characteristics and Recommended AC Operating Conditions (V
CC
= 3.3V
±
5%, Ta = 0 ~ 70
°
C) (Notes 6,7,8)
THMxxxxxx-60
SYMBOL
PARAMETER
THMxxxxxx-70
UNIT
NOTES
MIN
MAX
MIN
MAX
t
RC
t
RMW
t
PC
t
PRMW
Random Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read-Modify-Write Cycle Time
110
165
40
95
-
-
-
-
130
190
45
105
-
-
-
-
ns
ns
ns
ns
t
RAC
Access Time from RAS
-
60
-
70
ns
9, 14,
15
9, 14
9, 15
9
9
10
8
t
CAC
t
AA
t
CPA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RASP
t
RSH
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
CAS to Output in Low-Z
Output Buffer Turn-off Delay
Transition Time (Rise and Fall)
RAS Precharge Time
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
RAS Hold Time from CAS
Precharge (Fast Page Mode)
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
CAS Precharge Time
Row Address Set-Up Time
Row Address Hold Time
Column Address Set-Up Time
Column Address Hold Time
Column Address to RAS Lead Time
Read Command Set-Up Time
Read Command Hold Time
Read Command Hold Time referenced to RAS
Write Command Hold Time
-
-
-
0
0
3
20
35
40
-
20
50
-
-
-
-
0
0
3
50
70
70
25
25
40
45
-
20
50
-
ns
ns
-
ns
ns
ns
ns
ns
ns
ns
40
60
60
20
10,000
200,000
-
10,000
200,000
-
t
RHCP
40
-
45
-
ns
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
CP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
60
15
20
15
10
10
0
10
0
10
35
0
0
10
10
-
70
20
20
15
10
10
0
10
0
15
40
0
0
10
15
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10,000
40
25
-
-
-
-
-
-
-
-
-
-
-
10,000
45
30
-
-
-
-
-
-
-
-
-
-
-
14
15
11
11
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