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參數(shù)資料
| 型號： | TFDU5107-TR3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Integrated Low Profile Transceiver Module for Telecom Applications |
| 中文描述： | 超薄集成收發(fā)模塊的電信應用 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 233K |
| 代理商： | TFDU5107-TR3 |
TFDU5107
Vishay Semiconductors
Rev. A1.4, 01-Nov-02
3 (13)
www.vishay.com
Document Number 82534
Absolute Maximum Ratings
Reference Point Ground, Pin 8, unless otherwise noted
Parameters
Test Conditions
0 V < V
dd2
< 6 V
0 V < V
dd1
< 6 V
0 V < V
dd2
< 6 V
0 V < V
dd1
< 6 V
All Pins (Pin 1 excluded)
Pin 4
Pin 1, t
on
< 20%, < 20
μ
s
Symbol
V
dd1
V
dd2
V
logic
Min.
–0.5
–0.5
–0.5
Typ.
Max.
6
6
6
Unit
V
V
V
Supply Voltage Range
Input Current
Output Sink Current, Rxd
Rep. Pulsed IRED Current
Average IRED Current
Power Dissipation
Junction Temperature
Ambient Temperature Range
(Operating)
Storage Temperature Range
Soldering Temperature
Transmitter Data and
Shutdown Input Voltage
Receiver Data Output Voltage
Virtual Source Size
10
25
500
125
450
125
85
mA
mA
mA
mA
mW
°
C
°
C
I
IRED
(RP)
I
IRED
(DC)
P
tot
T
J
T
amb
–25
T
stg
–25
85
240
6
°
C
°
C
V
t = 20 s @215
°
C
2.4 V < V
dd1
< 5.5 V
215
V
Txd,
V
SD
–0.5
V
Rxd
d
–0.5
2.5
V
logic
+0.5
V
Method:
(1–1/e) encircled energy
2.8
mm
Maximum Intensity for Class 1 IEC60825–1 or
EN60825–1,
edition Jan.2001
I
e
*)
(500) **)
mW/sr
*)
**)
Due to the internal limitation measures the device is a “class 1” device
IrDA specifies the max. intensity with 500 mW/sr
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