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參數(shù)資料
| 型號(hào)： | TFDT6502E |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 667K |
| 代理商： | TFDT6502E |
TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E
Vishay
Semiconductor
Rev. B1.6, 02–Nov–00
7
www.vishay.com
Document Number 82526
Optoelectronic Characteristics (continued)
T
amb
= 25 C, V
CC
= 2.6 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Transmitter
IRED Operating Current
Output Radiant Intensity
(see Figure 3)
Output Radiant Intensity
R1*)
= 7.2
,
V
CC
= 5.0 V
V
CC
= 5.0 V,
α
= 0 , 15
Txd = High, SD = Low, R1
= 7.2
V
CC
= 5.0 V,
α
= 0 , 15
Txd = Low, SD = High,
(Receiver is inactive as long as
SD = High) R1
= 7.2
I
D
I
e
0.4
170
0.55
350
A
120
mW/sr
I
e
0.04
mW/sr
Output Radiant Intensity,
Angle of Half Intensity
Peak – Emission
Wavelength
Optical Output Pulse
Duration
±
24
°
P
880
900
nm
Input pulse width 217 ns,
1.152 Mbit/s
Input pulse width 125 ns,
4 Mbit/s
Input pulse width 250 ns,
4 Mbit/s
Input pulse width t < 80
μ
s
Input pulse width t
≥
80
μ
s
t
opt
207
217
227
ns
t
opt
117
125
133
ns
t
opt
242
250
258
ns
t
opt
t
80
40
μ
s
Optical Rise Time,
Fall Time
Optical Overshoot
t
ropt
,
t
fopt
10
ns
10
%
*)
R1: control series resistor for current limitation
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