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參數(shù)資料
| 型號(hào)： | TFDT6502E |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 4/17頁(yè) |
| 文件大小： | 667K |
| 代理商： | TFDT6502E |
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TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E
Vishay
Semiconductor
Rev. B1.6, 02–Nov–00
4
www.vishay.com
Document Number 82526
Absolute Maximum Ratings
Reference point Pin: GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
0 V <V
CC2
<6 V
Symbol
V
CC1
Min.
– 0.5
Typ.
Max.
6
Unit
V
Supply Voltage Range,
Transceiver
Supply Voltage Range,
Transmitter
Input Currents
0 V <V
CC1
<6 V
V
CC2
– 0.5
6
V
For all Pins, Except IRED
Anode Pin
10
mA
Output Sinking Current
Power Dissipation
Junction Temperature
Ambient Temperature
Range (Operating)
Storage Temperature
Range
Soldering Temperature
25
350
125
+85
mA
mW
°
C
°
C
See Derating Curve
P
D
T
J
T
amb
–25
T
stg
–25
+85
°
C
See Recommended Solder
Profile (see Figure 11)
240
°
C
Average Output Current
Repetitive Pulsed Output
Current
IRED Anode Voltage
Transmitter Data Input
Voltage
Receiver Data Output
Voltage
Virtual Source Size
I
IRED
(DC)
I
IRED
(RP)
130
600
mA
mA
<90
μ
s, t
on
<20%
V
IREDA
V
Txd
– 0.5
– 0.5
6
V
V
V
CC1
+0.5
V
Rxd
– 0.5
V
CC1
+0.5
V
Method:
(1–1/e) encircled energy
EN60825, 1997,
unidirectional operation,
worst case test mode
d
2.5
2.8
mm
Maximum Intensity for
Class 1 Operation of
IEC825–1 or EN60825–1
(worst case IrDA FIR
pulse pattern)
320
mW/sr
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