參數(shù)資料
型號(hào): TEMT1000
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor
中文描述: 硅npn型光電晶體管
文件頁數(shù): 3/5頁
文件大?。?/td> 79K
代理商: TEMT1000
TEMT1000
Vishay Telefunken
3 (5)
Rev. 4, 17-Feb-00
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81554
0.1
1
10
0
2
4
6
8
10
V
CE
– Collector Emitter Voltage ( V )
100
94 8294
C
C
f=1MHz
Figure 3. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0.4
0.2
0
0.2
0.4
S
r
0.6
94 8248
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 4. Relative Radiant Sensitivity vs.
Angular Displacement
0
2
4
6
12
0
2
8
14
94 8293
t
o
I
C
– Collector Current ( mA )
o
6
4
10
8
V
CE
=5V
R
L
=100
=950nm
t
off
t
on
Figure 5. Turn On/Turn Off Time vs. Collector Current
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