參數(shù)資料
型號(hào): TEMT1000
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor
中文描述: 硅npn型光電晶體管
文件頁數(shù): 2/5頁
文件大?。?/td> 79K
代理商: TEMT1000
TEMT1000
Vishay Telefunken
2 (5)
Rev. 4, 17-Feb-00
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81554
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
Min
70
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
1
3
200
nA
pF
deg
nm
nm
V
±
15
850
p
0.5
750...980
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
CEsat
0.3
t
on
2.0
s
Turn–Off Time
t
off
2.3
s
Cut–Off Frequency
f
c
180
kHz
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Collector Light Current E
e
=1mW/cm
2
,
Test Conditions
Type
Symbol
I
ca
Min
2.0
Typ
7.0
Max
Unit
mA
=950nm, V
CE
=5V
TEMT1000
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
94 8304
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 1. Collector Dark Current vs.
Ambient Temperature
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
c
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 2. Relative Collector Current vs.
Ambient Temperature
相關(guān)PDF資料
PDF描述
TEMT1020 Silicon Phototransistor
TEMT1030 Silicon Phototransistor
TEMT1040 Silicon Phototransistor
TEMT3700 Silicon NPN Phototransistor
TEMT4700 Silicon NPN Phototransistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TEMT1000 制造商:Vishay Semiconductors 功能描述:Photo Transistor
TEMT1000_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant
TEMT1000_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant
TEMT1020 功能描述:光電晶體管 NPN Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
TEMT1020 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P