參數(shù)資料
型號: TEMD5120X01
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
中文描述: 硅PIN光電二極管,符合RoHS,為無鉛(Pb發(fā)布)焊接工藝,通過AEC - Q101發(fā)布
文件頁數(shù): 2/8頁
文件大?。?/td> 134K
代理商: TEMD5120X01
www.vishay.com
2
Document Number 84680
Rev. 1.3, 07-May-07
TEMD5120X01
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Open circuit voltage
Typical Characteristics
T
amb
= 25
°
C, unless otherwise specified
Test condition
Symbol
V
F
V
(BR)
I
ro
C
D
Min
Typ.
1
Max
1.3
Unit
V
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
Breakdown voltage
60
V
Reverse dark current
2
30
nA
Diode capacitance
48
pF
Test condition
Symbol
V
o
Min
Typ.
350
Max
Unit
mV
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
Temperature coefficient of V
o
TK
Vo
-2.6
mV/K
Short circuit current
I
k
32
μA
Temperature coefficient of I
k
TK
Ik
0.1
%/K
Reverse light current
I
ra
25
35
μA
Angle of half sensitivity
Wavelength of peak sensitivity
λ
p
λ
0.5
NEP
± 65
940
deg
nm
Range of spectral bandwidth
790 to 1050
nm
Noise equivalent power
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
4 x 10
-14
100
W/
Hz
Rise time
t
r
t
f
ns
Fall time
100
ns
Figure 1. Reverse Dark Current vs. Ambient Temperature
20
40
60
8
0
1
10
100
1000
100
94
8
403
V
R
= 10
V
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
r
v
e
u
r
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
0.6
0.
8
1.0
1.2
1.4
94
8
409
V
= 5
V
λ
= 950 nm
100
8
0
60
40
20
0
I
v
e
v
e
u
r
T - Am
b
ient Temperat
u
re (°C)
r
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