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參數(shù)資料
| 型號(hào)： | TEMD5020 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode |
| 中文描述： | 硅PIN光電二極管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 155K |
| 代理商： | TEMD5020 |
www.vishay.com
2
Document Number 84685
Rev. 1.2, 12-Aug-05
TEMD5020
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Open Circuit Voltage
Typical Characteristics
Tamb = 25
°
C unless otherwise specified
Test condition
Symbol
V
F
V
(BR)
I
ro
C
D
Min
Typ.
1
Max
1.3
Unit
V
I
F
= 50 mA
I
R
= 100
μ
A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
Breakdown Voltage
60
V
Reverse Dark Current
2
30
nA
Diode capacitance
48
pF
Test condition
Symbol
V
o
Min
Typ.
350
Max
Unit
mV
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
Temp. Coefficient of V
o
TK
Vo
-2.6
mV/K
Short Circuit Current
I
k
32
μ
A
Temp. Coefficient of I
k
TK
Ik
0.1
%/K
Reverse Light Current
I
ra
25
35
μ
A
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
λ
p
λ
0.5
NEP
± 65
900
nm
Range of Spectral Bandwidth
600 to 1050
nm
Noise Equivalent Power
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 k
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
,
λ
= 820 nm
4 x 10
-14
100
W/
√
Hz
Rise Time
t
r
t
f
ns
Fall Time
100
ns
Figure 1. Reverse Dark Current vs. Ambient Temperature
20
40
60
8
0
1
10
100
1000
100
94
8
403
V
R
= 10
V
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
r
v
e
u
r
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
0.6
0.
8
1.0
1.2
1.4
94
8
409
V
R
= 5
V
λ
= 950 nm
100
8
0
60
40
20
0
I
r
v
e
v
e
u
r
T
am
b
- Am
b
ient Temperat
u
re (°C)
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