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參數(shù)資料
| 型號： | TEA1541 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | SMPS control IC with synchronization function |
| 中文描述： | 開關(guān)電源與同步功能控制IC |
| 文件頁數(shù)： | 12/19頁 |
| 文件大小： | 112K |
| 代理商： | TEA1541 |
2003 Aug 11
12
Philips Semiconductors
Product specification
SMPS control IC with
synchronization function
TEA1541
10 CHARACTERISTICS
T
amb
= 25
°
C; V
CC
= 15 V; all voltages are measured with respect to ground (pin 2); currents are positive when flowing
into the IC.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Start-up current source (pin VIN)
I
VIN(min)
minimum supply current drawn from
pin VIN
supply voltage for pin VIN current trip
level
maximum supply current drawn from
pin VIN
supply current drawn from pin VIN
V
CC
< V
CC(trip)(VIN)
,
V
VIN
> 100 V
V
VIN
> 100 V
300
400
500
μ
A
V
CC(VIN)trip
0.5
0.75
1.0
V
I
VIN(max)
V
CC
= 10 V;
V
VIN
> 100 V
after start-up;
V
CC
> V
CC(start)
;
V
VIN
> 100 V
1.25
1.6
1.95
mA
I
VIN
100
300
μ
A
V
bd
M-level
breakdown voltage
mains-dependentoperation-enabling
level
mains undervoltage lock-out level
550
33
37
40
V
V
M
UVLO
V
CC
management (pin V
CC
)
25
28.5
33
V
V
CC(start)
V
CC(UVLO)
V
CC(hys)
I
CC(h)
start-up voltage
undervoltage lock-out
hysteresis voltage
charging current (high)
10.8
8.5
2.1
11.4
9.0
2.4
0.25
12
9.5
2.7
V
V
V
mA
V
CC(start)
V
CC(UVLO)
V
VIN
> 100 V;
V
CC
< V
CC(trip)(VIN)
V
VIN
> 100 V;
V
CC(trip)(VIN)
< V
CC
< V
CC(UVLO)
V
VIN
> 100 V; V
CC(UVLO)
< V
CC
< V
CC(start)
no load on pin DRIVER
I
CC(l)
charging current (low)
1.6
1.2
0.75
mA
I
CC(restart)
restart current
1.25
1.0
0.75
mA
I
CC(oper)
supply current under normal
operation
1.6
mA
Primary current simulation
α
PCS
Demagnetization management (pin DEM)
primary current simulation factor
0.9
A.s/V
V
th(DEM)
demagnetization comparator
threshold voltage
demagnetization current
negative clamp voltage
positive clamp voltage
suppression time of transformer
ringing at start of secondary stroke
short-circuit protection voltage
70
100
130
mV
I
prot(DEM)
V
clamp(DEM)(neg)
V
clamp(DEM)(pos)
t
suppr
50
0.5
0.55
1.1
0.25
0.7
1.5
10
0.05
0.85
1.9
nA
V
V
μ
s
I
(DEM)
=
150
μ
A
I
(DEM)
= 250
μ
A
V
sc(prot)(DEM)
90
50
10
mV
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