- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368631 > TEA1099H (NXP SEMICONDUCTORS) Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer PDF資料下載
參數(shù)資料
| 型號(hào)： | TEA1099H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer |
| 中文描述： | TELEPHONE SPEECH CKT, PQFP44 |
| 封裝： | 10 X 10 MM, 1.75 MM HEIGHT, PLASTIC, QFP-44 |
| 文件頁數(shù)： | 25/40頁 |
| 文件大小： | 185K |
| 代理商： | TEA1099H |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
1999 Apr 08
25
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
G
v(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
TX
AMPLIFIER USING
HFTX (
PINS
HFTX
AND
LN); note 1
G
v(HFTX-LN)
G
v(f)
voltage gain from pin HFTX to LN
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
total harmonic distortion at LN
maximum input voltage at HFTX
(RMS value)
noise output voltage at pin LN; pin
HFTX shorted to GND through
200
in series with 10
μ
F
gain reduction if not activated
V
HFTX
= 15 mV (RMS)
f = 300 to 3400 Hz
33.5
34.7
±
0.25
35.9
dB
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.25
dB
THD
V
HFTX(rms)
V
LN
= 1.4 V (RMS)
I
line
= 70 mA; THD = 2%
95
2
%
mV
V
no(LN)
psophometrically
weighted (p53 curve)
77.5
dBmp
G
v(mute)
HFC = LOW;
MUTT = HIGH;
MUTR = LOW;
AUXC = HIGH
60
80
dB
M
ICROPHONE MONITORING ON
TXOUT (
PINS
MIC+, MIC
AND
TXOUT); note 1
G
v(MIC-TXOUT)
voltage gain from pin MIC+/MIC
to TXOUT
G
v(f)
gain variation with frequency
referenced to 1 kHz
G
v(T)
gain variation with temperature
referenced to 25
°
C
V
MIC
= 2 mV (RMS)
48.3
49.8
51.3
dB
f = 300 to 3400 Hz
±
0.1
dB
T
amb
=
25 to +75
°
C
±
0.35
dB
RX amplifiers
RX
AMPLIFIERS USING
IR (
PINS
IR
AND
RECO); note 1
G
v(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
maximum input voltage on IR
(referenced to LN) (RMS value)
V
IR
= 15 mV (RMS)
28.7
29.7
30.7
dB
G
v(f)
f = 30 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.3
dB
V
IR(rms)(max)
I
line
= 70 mA; THD = 2%
50
mV
V
RECO(rms)(max)
maximum output voltage on
RECO (RMS value)
V
no(RECO)(rms)
noise output voltage at pin RECO;
pin IR is an open circuit
(RMS value)
THD = 2%
0.75
0.9
V
psophometrically
weighted (p53 curve)
88
dBVp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TEA1103TS | TERM BLOCK 7.5MM VERT 3POS PCB |
| TEA1103 | Fast charge ICs for NiCd and NiMH batteries |
| TEA1103T | Fast charge ICs for NiCd and NiMH batteries |
| TEA1118A | Versatile cordless transmisssion circuit |
| TEA1118AM | LED TRUE GREEN 532NM SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TEA1100 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Battery monitor for Nicd and NiMH chargers |
| TEA1100T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Battery monitor for Nicd and NiMH chargers |
| TEA1101 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Battery monitor for Nicd and NiMH chargers |
| TEA1101T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Battery monitor for Nicd and NiMH chargers |
| TEA1102 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Fast charge ICs for NiCd, NiMH, SLA and LiIon |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。