參數(shù)資料
型號(hào): TEA1096A
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Speech and listening-in IC
中文描述: TELEPHONE SPEECH CKT, PDIP28
封裝: 0.600 INCH, PLASTIC, DIP-28
文件頁(yè)數(shù): 22/32頁(yè)
文件大小: 390K
代理商: TEA1096A
November 1994
22
Philips Semiconductors
Product Specification
Speech and listening-in IC
TEA1096; TEA1096A
G
vtxf
voltage gain variation with
frequency referenced to 1 kHz
voltage gain adjustment
with R
GAS
gain reduction with
MUTE = HIGH
gain reduction when
DLS/MMUTE is short-circuited
to V
EE
maximum output voltage swing
at pin LN (peak-to-peak value)
noise output voltage at pin LN
V
MIC
= 2 mV (RMS);
f = 300 to 3400 Hz
note 2
±
0.5
dB
G
vtxr
19
0
dB
G
txm
60
80
dB
G
txd
60
80
dB
V
LN(p-p)
R
GAS
= 90.9 k
3.65
4.3
V
V
notx
pins MICP and MICM
short-circuited through
200
; Psophometrically
weighted (P53 curve)
72
dBmp
CMRR
common mode rejection ratio
80
dB
Dynamic limiter for sending (DLS/MMUTE); related to the microphone amplifier clipping detector
R
GAS
= 90.9 k
;
C
DLS
= 470 nF
t
rel
release time when V
MIC
drops
from 3.2 mV + 10 dB to 3.2 mV
C
DLS
= 470 nF
THD
total harmonic distortion
V
MIC
= 3.2 mV + 10 dB;
R
GAS
= 90.9 k
;
C
DLS
= 470 nF
V
MIC
= 3.2 mV + 15 dB;
R
GAS
= 90.9 k
;
C
DLS
= 470 nF
t
att
attack time when V
MIC
jumps
from 3.2 mV to 3.2 mV + 10 dB
1.5
5
ms
R
GAS
= 90.9 k
;
40
120
ms
2
3
%
3
10
%
Receiving amplifier (ILS, BAL1, BAL2, OSP, GAR, QRP, QRM and MUTE)
G
vrx
voltage gain from pin LN to QRP
or QRM
R
GAR
= 90.9 k
;
V
line
= 50 mV (RMS);
single-ended load;
R
QRP
= 150
R
GAR
= 90.9 k
;
V
line
= 50 mV (RMS);
bridge tied load;
R
QRM
= 450
T
amb
=
25 to +75
°
C
3.5
2.5
1.5
dB
2.5
3.5
4.5
dB
G
vrxT
voltage gain variation with
temperature referenced
to 25
°
C.
voltage gain variation with
frequency referenced to 1 kHz
voltage gain adjustment with
R
GAR
±
0.5
dB
G
vrxf
f = 300 to 3400 Hz
±
0.5
dB
G
vrxr
12
8
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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