![](http://datasheet.mmic.net.cn/370000/TEA1096_datasheet_16738776/TEA1096_21.png)
November 1994
21
Philips Semiconductors
Product Specification
Speech and listening-in IC
TEA1096; TEA1096A
CHARACTERISTICS
I
line
= 20 mA; I
P
= 0 mA; V
EE
= 0 V; PD = LOW; MUTE = LOW; Z
line
= 600
; Z
SIMP
= 6 k
; Z
BAL1
= 18 k
; Z
LI'
= 6 k
;
R
SLPE
= 20
; R
DD
= 390
; R
GAS
= 90.9 k
; R
GAR
= 0.9 k
; R
QLS
= 50
; f = 1 kHz; T
amb
= 25
°
C; measured in test
circuit of Fig.22; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Line interface/supply (LN, SLPE, REG, V
EE
, V
DD
, V
BB
and V
ref
)
V
SLPE
V
SLPE(Iline)
V
SLPE(T)
stabilized voltage (line interface)
V
SLPE
variation with I
line
V
SLPE
variation with
temperature referenced
to 25
°
C
stabilized supply voltage
V
BB
variation with I
line
V
BB
variation with temperature
referenced to 25
°
C
current sunk by V
BB
shunt
regulator when a line current
equal to 20 mA is available
internal current consumption
from pin V
DD
supply voltage for speech and
microcontroller
4.2
150
4.45
30
±
60
4.7
+150
V
mV
mV
I
line
= 20 to 140 mA
T
amb
=
25 to +75
°
C
V
BB
V
BB(Iline)
V
BB(T)
3.4
150
3.6
30
±
50
3.8
+150
V
mV
mV
I
line
= 20 to 140 mA
T
amb
=
25 to +75
°
C
I
sink
I
P
= 0 mA; note 1
9.0
mA
I
DD
I
P
= 0 mA;
R
DD
= 390
R
DD
= 390
;
I
P
= 0 mA
R
DD
= 390
;
I
P
= 1 mA
2.4
2.9
mA
V
DD
3.5
V
3.1
V
V
ref
I
DD(PD)
reference output voltage
current consumption from C
VDD
during power-down condition
current consumption from C
VBB
during power-down condition
DC line voltage
DC line voltage in low current
conditions
0.5V
DD
100
150
V
μ
A
PD = HIGH;
V
DD
= 4.3 V
PD = HIGH;
V
BB
= 3.5 V
I
BB(PD)
350
500
μ
A
V
LN
V
LN
4.4
4.7
2.5
5.0
V
V
R
DD
= 390
;
I
P
= 0 mA; I
line
= 4 mA
R
DD
= 390
;
I
P
= 0 mA; I
line
= 6 mA
3.3
V
Microphone amplifier (MICP, MICM, GAS, LN, and MUTE)
|Z
i1
|
input impedance between pins
MICP or MICM and V
EE
input impedance between pins
MICP and MICM
voltage gain from pin MICP or
MICM to LN
voltage gain variation with
temperature referenced
to 25
°
C.
25.5
32
38.5
k
|
Z
i2
|
51
64
77
k
G
vtx
V
MIC
= 2 mV (RMS);
R
GAS
= 90.9 k
V
MIC
= 2 mV (RMS);
T
amb
=
25 to +75
°
C
51
52
53
dB
G
vtxT
±
0.5
dB