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參數資料
| 型號： | TE28F800C3B110 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 3伏高級啟動塊8 - ，16 - ，32 - Mbit閃存家庭 |
| 文件頁數： | 47/59頁 |
| 文件大?。?/td> | 384K |
| 代理商： | TE28F800C3B110 |
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E
3 VOLT ADVANCED+ BOOT BLOCK
47
PRODUCT PREVIEW
Table C2. Example of Query Structure Output of x16 and x8 Devices
Device
Address
Word Addressing:
Query Data
Byte
Address
Byte Addressing:
Query Data
A
16
–A
1
D
15
–D
0
A
7
–A
0
D
7
–D
0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
0051h
0052h
0059h
P_ID
LO
P_ID
HI
P
LO
P
HI
A_ID
LO
A_ID
HI
...
“Q”
“R”
“Y”
PrVendor ID# (Lo byte)
PrVendor ID# (HI byte)
PrVendor TblAddr (Lo)
PrVendor TblAddr (Hi)
AltVendor ID# (Lo)
AltVendor ID# (Hi)
10h
11h
12h
13h
14h
15h
16h
17h
18h
...
51h
52h
59h
P_ID
LO
P_ID
HI
PrVendor ID# (Hi)
P
LO
PrVndr TblAdr (Lo)
P
HI
PrVndr TblAdr (Hi)
A_ID
LO
AltVndr ID# (Lo)
A_ID
HI
AltVndr ID# (Hi)
“Q”
“R”
“Y”
PrVendor ID# (Lo)
C.2
QUERY STRUCTURE OVERVIEW
The Query command causes the flash component to display the Common Flash Interface (CFI) Query
structure or “database.” The structure sub-sections and address locations are summarized in Table D3.
The following sections describe the Query structure sub-sections in detail.
Table C3. Query Structure
(1)
Offset
Sub-Section Name
Description
00h
Manufacturer Code
01h
Device Code
02-0Fh
Reserved
Reserved for vendor-specific information
10h
CFI Query Identification String
Command set ID and vendor data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P
(3)
Primary Intel
-
specific Extended Query
table
Vendor
-
defined additional information
specific to the Primary Vendor Algorithm
NOTES:
1. Refer to Section D.1 and Table D1 for the detailed definition of offset address as a function of device bus width and mode.
2. BA = The beginning location of a Block Address (e.g., 08000h is the beginning location of block 1 when the block size is
32 Kword).
3. Offset 15 defines
“P” which points to the Primary Intel
-
specific Extended Query Table.
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| TE28F008C3T110 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F320C3T110 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F160C3T110 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F800C3T110 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TE28F800C3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F800C3BA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F800C3BA90 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| TE28F800C3-BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
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