參數(shù)資料
型號(hào)： TE28F640B3TC100
廠(chǎng)商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁(yè)數(shù)： 19/58頁(yè)
文件大?。?/td> 920K
代理商： TE28F640B3TC100
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
3UHOLPLQDU\
13
When the status register indicates that erasure is complete, check the erase status bit to verify that
the erase operation was successful. If the erase operation was unsuccessful, SR.5 of the status
register will be set to a “1,” indicating an erase failure. If V
PP
was not within acceptable limits after
the Erase Confirm command was issued, the WSM will not execute the erase sequence; instead,
SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to identify that
V
PP
supply voltage was not within acceptable limits.
After an erase operation, clear the status register (50H) before attempting the next operation. Any
CUI instruction can follow after erasure is completed; however, to prevent inadvertent status
register reads, it is advisable to place the flash in read array mode after the erase is complete.
3.2.5.1
Suspending and Resuming Erase
Since an erase operation requires on the order of seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in order to read data from or program data to
another block in memory. Once the erase sequence is started, writing the Erase Suspend command
to the CUI requests that the WSM pause the erase sequence at a predetermined point in the erase
algorithm. The status register will indicate if/when the erase operation has been suspended.
A Read Array/Program command can now be written to the CUI in order to read data from/
program data to blocks other than the one currently suspended. The Program command can
subsequently be suspended to read yet another array location. The only valid commands while
erase is suspended are Erase Resume, Program, Read Array, Read Status Register, or Read
Identifier. During erase suspend mode, the chip can be placed in a pseudo-standby mode by taking
CE# to V
IH
. This reduces active current consumption.
Erase Resume continues the erase sequence when CE# = V
IL
. As with the end of a standard erase
operation, the status register must be read and cleared before the next instruction is issued.
NOTES:
PA:
Program Address
IA:
Identifier Address
1. Bus operations are defined in
Table 3
.
2. Following the Intelligent Identifier command, two read operations access manufacturer and device codes.
A
0
= 0 for manufacturer code, A
0
= 1 for device code. A
1
–A
21
= 0.
3. Either 40H or 10H command is valid although the standard is 40H.
4. When writing commands to the device, the upper data bus [DQ
8
–DQ
15
] should be either V
IL
or V
IH
, to
minimize current draw.
PD:
Program Data
ID:
Identifier Data
BA:
Block Address
SRD:
Status Register Data
Table 6. Command Bus Definitions
(1,4)
First Bus Cycle
Second Bus Cycle
Command
Notes
Oper
Addr
Data
Oper
Addr
Data
Read Array
Write
X
FFH
Read Identifier
2
Write
X
90H
Read
IA
ID
Read Status Register
Write
X
70H
Read
X
SRD
Clear Status Register
Write
X
50H
Program
3
Write
X
40H /
10H
Write
PA
PD
Block Erase/Confirm
Write
X
20H
Write
BA
D0H
Program/Erase Suspend
Write
X
B0H
Program/Erase Resume
Write
X
D0H
相關(guān)PDF資料
PDF描述
TE28F320B3TC70 3 Volt Advanced Boot Block Flash Memory
TE28F640B3TC90 3 Volt Advanced Boot Block Flash Memory
TE28F320B3TC90 3 Volt Advanced Boot Block Flash Memory
TE28F004SC-100 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
TE28F320B3BA100 3 Volt Advanced Boot Block Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F640B3TC90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F640C3 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
TE28F640C3BA70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
TE28F640C3BC70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
TE28F640C3BC80 制造商:Intel 功能描述:MM# 851209 FLASH
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