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參數(shù)資料
| 型號： | TE28F400B3B110 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 256K X 16 FLASH 3V PROM, 110 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 20/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | TE28F400B3B110 |
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SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
20
PRELIMINARY
Table 6. Command Bus Definitions
First Bus Cycle
Second Bus Cycle
Command
Notes
Oper
Addr
Data
Oper
Addr
Data
Read Array
5
Write
X
FFH
Intelligent Identifier
2,3.5
Write
X
90H
Read
IA
ID
Read Status Register
5
Write
X
70H
Read
X
SRD
Clear Status Register
5
Write
X
50H
Write (Program)
4,5
Write
X
40H
Write
PA
PD
Alternate Write (Program)
4,5
Write
X
10H
Write
PA
PD
Block Erase/Confirm
5
Write
X
20H
Write
BA
D0H
Program/Erase Suspend
5
Write
X
B0H
Program/Erase Resume
5
Write
X
D0H
ADDRESS
BA = Block Address
IA
=
Identifier Address
PA = Program Address
X = Don’t Care
NOTES:
1.
Bus operations are defined in Table 3.
2.
A
0
= 0 for manufacturer code, A
0
= 1 for device code.
3.
Following the Intelligent Identifier command, two read operations access manufacturer and device codes.
4.
Either 40H or 10H command is valid.
5.
When writing commands to the device, the upper data bus [DQ
8
–DQ
15
] should be either V
IL
or V
IH
, to minimize current
draw.
DATA
SRD = Status Register Data
ID = Identifier Data
PD = Program Data
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相關(guān)代理商/技術(shù)參數(shù) |
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| TE28F400B3B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3-B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3-B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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