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參數(shù)資料
| 型號： | TE28F320B3BC90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory |
| 中文描述： | 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 24/58頁 |
| 文件大?。?/td> | 920K |
| 代理商： | TE28F320B3BC90 |
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
18
3UHOLPLQDU\
4.0
Electrical Specifications
4.1
Absolute Maximum Ratings
NOTES:
1. Minimum DC voltage is -0.5 V on input/output pins, with allowable undershoot to -2.0 V for periods <20 ns.
Maximum DC voltage on input/output pins is V
CC
+0.5 V, with allowable overshoot to V
CC
+1.5 for periods of
<20 ns
2. Maximum DC voltage on V
may overshoot to +14.0 V for periods <20 ns.
3. V
Program voltage is normally 2.7 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be done for a
maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase.
V
may be connected to 12 V for a total of 80 hours maximum. See
Section 3.4
for details.
4. Minimum DC voltage is -0.5 V on V
CC
and V
, with allowable undershoot to -2.0 V for periods <20 ns.
Maximum DC voltage on V
CC
and V
CCQ
pins is V
CC
+0.5 V, with allowable overshoot to V
CC
+1.5 for periods
of <20 ns.
5. Output shorted for no more than one second. No more than one output shorted at a time.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended
and extended exposure beyond the “Operating Conditions” may affect device reliability.
Parameter
Maximum Rating
Extended Operating Temperature
During Read
–40 °C to +85 °C
During Block Erase and Program
–40 °C to +85 °C
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any Pin (except V
CC
, V
CCQ
and V
PP
) with Respect to GND
–0.5 V to +3.7 V
(1)
V
PP
Voltage (for Block Erase and Program) with Respect to GND
–0.5 V to +13.5 V
(1,2,3)
V
CC
and V
CCQ
Supply Voltage with Respect to GND
–0.2 V to +3.7 V
(4)
Output Short Circuit Current
100 mA
(5)
NOTICE:
This datasheet contains preliminary information on new products in production. Specifications are
subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before
finalizing a design
.
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F320B3BC70 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F320B3TA110 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F640C3 | 3 Volt Intel Advanced+ Boot Block Flash Memory |
| TE28F320C3 | 3 Volt Intel Advanced+ Boot Block Flash Memory |
| TE28F004B3B110 | 3 Volt Advanced Boot Block Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F320B3BD90A | 制造商:Micron Technology Inc 功能描述:32MB, ARMAGOSA 48LD TSOP |
| TE28F320B3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F320B3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F320B3TA100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F320B3TA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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