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參數(shù)資料
| 型號： | TE28F320B3BC90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory |
| 中文描述： | 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 21/58頁 |
| 文件大?。?/td> | 920K |
| 代理商： | TE28F320B3BC90 |
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
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15
3.3.2
WP# = V
IH
for Block Unlocking
WP# = V
IH
unlocks all lockable blocks.
These blocks can now be programmed or erased.
Note that RP# does not override WP# locking as in previous Boot Block devices. WP# controls all
block locking and V
PP
provides protection against spurious writes.
Table 8
defines the write
protection methods.
3.4
V
PP
Program and Erase Voltages
Intel
3 Volt Advanced Boot Block products provide in-system programming and erase at 2.7 V.
For customers requiring fast programming in their manufacturing environment, 3 Volt Advanced
Boot Block includes an additional low-cost 12 V programming feature.
The 12 V V
PP
mode enhances programming performance during the short period of time typically
found in manufacturing processes; however, it is not intended for extended use. 12 V may be
applied to V
PP
during program and erase operations for a maximum of 1000 cycles on the main
blocks and 2500 cycles on the parameter blocks. V
PP
may be connected to 12 V for a total of 80
hours maximum.
Warning:
Stressing the device beyond these limits may cause permanent damage.
During read operations or idle times, V
PP
may be tied to a 5 V supply. For program and erase
operations, a 5 V supply is not permitted. The V
PP
must be supplied with either 2.7 V–3.6 V or
11.4 V–12.6 V during program and erase operations.
3.4.1
V
PP
= V
IL
for Complete Protection
The V
PP
programming voltage can be held low for complete write protection of all blocks in the
flash device. When V
PP
is below V
PPLK
, any program or erase operation will result in a error,
prompting the corresponding status register bit (SR.3) to be set.
3.5
Power Consumption
Intel Flash devices have a tiered approach to power savings that can significantly reduce overall
system power consumption. The Automatic Power Savings (APS) feature reduces power
consumption when the device is selected but idle. If the CE# is deasserted, the flash enters its
standby mode, where current consumption is even lower. The combination of these features can
minimize memory power consumption, and therefore, overall system power consumption.
Table 8. Write Protection Truth Table for the Advanced Boot Block Flash Memory Family
V
PP
WP#
RP#
Write Protection Provided
X
X
V
IL
All Blocks Locked
V
IL
X
V
IH
All Blocks Locked
≥
V
PPLK
≥
V
PPLK
V
IL
V
IH
Lockable Blocks Locked
V
IH
V
IH
All Blocks Unlocked
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F320B3BC70 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F320B3TA110 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F640C3 | 3 Volt Intel Advanced+ Boot Block Flash Memory |
| TE28F320C3 | 3 Volt Intel Advanced+ Boot Block Flash Memory |
| TE28F004B3B110 | 3 Volt Advanced Boot Block Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F320B3BD90A | 制造商:Micron Technology Inc 功能描述:32MB, ARMAGOSA 48LD TSOP |
| TE28F320B3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F320B3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F320B3TA100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F320B3TA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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