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| 型號： | TE28F320B3BA90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 26/48頁 |
| 文件大小： | 304K |
| 代理商： | TE28F320B3BA90 |
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SMART 3 ADVANCED BOOT BLOCK
E
26
PRELIMINARY
4.4
DC Characteristics
(Continued)
V
CC
2.7 V
–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Unit Test Conditions
V
IL
Input Low Voltage
–0.4
V
CCQ
–0.4V
0.4
–0.2
V
CCQ
–0.2V
-0.10
0.2
–0.2
V
CCQ
–0.2V
-0.10
0.2
V
V
IH
Input High Voltage
V
V
OL
Output Low
Voltage
0.10
0.10
0.10
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100
μ
A
V
OH
Output High
Voltage
V
CCQ
–0.1V
V
CCQ
–0.1V
V
CCQ
–0.1V
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
= –100
μ
A
V
PPLK
V
Lock-Out
Voltage
2
1.5
1.5
1.5
V
Complete Write
Protection
V
PP1
V
PP
during
2
2.7
3.6
V
V
PP2
Program and
2
2.7
2.85
V
V
PP3
Erase Operations
2
2.7
3.3
V
V
PP4
2,5
11.4
12.6
11.4
12.6
11.4
12.6
V
V
LKO
V
CC
Prog/Erase
Lock Voltage
1.5
1.5
1.5
V
V
LKO2
V
CCQ
Prog/Erase
Lock Voltage
1.2
1.2
1.2
V
NOTES:
1.
2.
All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
, T
A
= +25 °C.
Erase and program are inhibited when V
< V
and not guaranteed outside the valid V
ranges of V
, V
PP2
, V
PP3
and V
For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
valid levels for program and erase operations.
Sampled, not 100% tested.
Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation.
Applying V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
may be connected to 12 V for a total of 80 hours maximum. See Section 3.4
for details. For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
must be
at valid levels for program and erase operations.
Since each column lists specifications for a different V
and V
CCQ
voltage range combination, the test conditions V
Max,
V
CCQ
Max, V
CC
Min, and V
CCQ
Min refer to the maximum or minimum V
CC
or V
CCQ
voltage listed at the top of each column.
3.
4.
5.
6.
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相關代理商/技術參數(shù) |
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| TE28F320B3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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| TE28F320B3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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