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參數(shù)資料
| 型號： | TE28F200BX-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 80 ns, PDSO56 |
| 封裝： | 20 X 14 MM, TSOP-56 |
| 文件頁數(shù)： | 43/55頁 |
| 文件大?。?/td> | 638K |
| 代理商： | TE28F200BX-T80 |
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E
4.8
T
A
= 0 °C to +70 °C
2-MBIT SmartVoltage BOOT BLOCK FAMILY
43
SEE NEW DESIGN RECOMMENDATIONS
Erase and Program Timings
—Commercial
V
PP
5 V ± 10%
12 V ± 5%
V
CC
3.3 ± 0.3 V
5 V ± 10%
3.3 ± 0.3 V
5 V ± 10%
Parameter
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit
Boot/Parameter Block Erase Time
0.84
7
0.8
7
0.44
7
0.34
7
s
Main Block Erase Time
2.4
14
1.9
14
1.3
14
1.1
14
s
Main Block Program Time (Byte)
1.7
1.8
1.6
1.2
s
Main Block Program Time (Word)
1.1
0.9
0.8
0.6
s
Byte Program Time
10
10
8
8
μs
Word Program Time
13
13
8
8
μs
NOTES:
1.
2.
All numbers are sampled, not 100% tested.
Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of V
CC
and V
PP
.
See Note 3 for typical conditions.
Typical conditions are +25
°C with V
and V
at the center of the specified voltage range.
Production programming using
V
CC
= 5.0 V, V
PP
= 12.0 V
typically results in a 60% reduction in programming time.
Contact your Intel representative for information regarding maximum byte/word program specifications.
3.
4.
4.9
Extended Operating Conditions
Table 11. Extended Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC
3.3 V V
CC
Supply Voltage (± 0.3 V)
1
3.0
3.6
Volts
5 V V
CC
Supply Voltage (10%)
2
4.50
5.50
Volts
NOTES:
1.
2.
AC specifications are valid at both voltage ranges.
See DC Characteristicstables for voltage range-specific specifications.
10% V
CC
specifications apply to 80 ns and 120 ns versions in their standard test configuration.
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