參數(shù)資料
型號(hào): TE28F200BX-B80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 128K X 16 FLASH 12V PROM, 80 ns, PDSO56
封裝: 20 X 14 MM, TSOP-56
文件頁(yè)數(shù): 30/55頁(yè)
文件大?。?/td> 638K
代理商: TE28F200BX-B80
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
30
SEE NEW DESIGN RECOMMENDATIONS
4.4
DC Characteristics
—Commercial
Prod
BV-60
BV-80
BV-120
Sym
Parameter
V
CC
3.3 ± 0.3 V
5 V ± 10%
Unit
Test Conditions
Note
Typ
Max
Typ
Max
I
IL
Input Load Current
1
± 1.0
± 1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
CE# = RP# = BYTE# =
WP# = V
IH
V
CC
= V
CC
Max
CE# = RP# = V
CC
±
0.2 V
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
RP# = GND ± 0.2 V
CMOS INPUTS
V
CC
= V
CC
Max
CE# = GND, OE# = V
CC
f = 10 MHz (5 V),
5 MHz (3.3 V)
I
OUT
= 0 mA, Inputs =
GND ± 0.2 V or V
CC
± 0.2 V
TTL INPUTS
V
CC
= V
CC
Max
CE# = V
IL
, OE# = V
IH
f = 10 MHz (5 V),
5 MHz (3.3 V)
I
OUT
= 0 mA, Inputs =
V
IL
or V
IH
V
PP
= V
PPH
1 (at 5 V)
Program in Progress
V
PP
= V
PPH
2 (at 12 V)
Program in Progress
V
PP
= V
PPH
1 (at 5 V)
Block Erase in Progress
V
PP
= V
PPH
2 (at 12 V)
Block Erase in Progress
I
LO
Output Leakage Current
1
± 10
± 10
μA
I
CCS
V
CC
Standby Current
1,3
0.4
1.5
0.8
2.0
mA
60
110
50
130
μA
I
CCD
V
CC
Deep Power-Down
Current
1
0.2
8
0.2
8
μA
I
CCR
V
CC
Read Current for
Word or Byte
1,5,6
15
30
50
60
mA
15
30
55
65
mA
I
CCW
V
CC
Program Current for
Word or Byte
1,4
13
30
30
50
mA
10
25
30
45
mA
I
CCE
V
CC
Erase Current
1,4
13
30
18
35
mA
10
25
18
30
mA
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