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參數(shù)資料
| 型號： | TE28F160B3BA90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 19/48頁 |
| 文件大?。?/td> | 304K |
| 代理商： | TE28F160B3BA90 |
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E
SMART 3 ADVANCED BOOT BLOCK
19
PRELIMINARY
Table 7. Status Register Bit Definition
WSMS
ESS
ES
PS
VPPS
PSS
BLS
R
7
6
5
4
3
2
1
0
NOTES:
SR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
Check Write State Machine bit first to determine
word program or block erase completion, before
checking program or erase status bits.
SR.6 = ERASE-SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase In Progress/Completed
When erase suspend is issued, WSM halts
execution and sets both WSMS and ESS bits to
“1.”
ESS bit remains set at “1” until an Erase Resume
command is issued.
SR.5 = ERASE STATUS (ES)
1 = Error In Block Erasure
0 = Successful Block Erase
When this bit is set to “1,” WSM has applied the
max. number of erase pulses to the block and is still
unable to verify successful block erasure.
SR.4 = PROGRAM STATUS (PS)
1 = Error in Word Program
0 = Successful Word Program
When this bit is set to “1,” WSM has attempted but
failed to program a word.
SR.3 = V
PP
STATUS (VPPS)
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
OK
The V
PP
status bit does not provide continuous
indication of V
PP
level. The WSM interrogates V
PP
level only after the Program or Erase command
sequences have been entered, and informs the
system if V
PP
has not been switched on. The V
PP
is
also checked before the operation is verified by the
WSM. The V
PP
status bit is not guaranteed to report
accurate feedback between V
PPLK
max and V
PP1
min
or between V
PP1
max and V
PP4
min.
SR.2 = PROGRAM SUSPEND STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
When program suspend is issued, WSM halts
execution and sets both WSMS and PSS bits to “1.”
PSS bit remains set to “1” until a Program Resume
command is issued.
SR.1 = Block Lock Status
1 = Program/Erase attempted on locked
block; Operation aborted
0 = No operation to locked blocks
If a program or erase operation is attempted to one
of the locked blocks, this bit is set by the WSM. The
operation specified is aborted and the device is
returned to read status mode.
SR.0 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
This bit is reserved for future use and should be
masked out when polling the status register.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F160B3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3BC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3BD70 | 制造商:Intel 功能描述: |
| TE28F160B3BD70A | 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| TE28F160B3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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