參數(shù)資料
型號(hào)： TE28F016B3T150
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
中文描述： 2M X 8 FLASH 3V PROM, 150 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁(yè)數(shù)： 3/49頁(yè)
文件大?。?/td> 408K
代理商： TE28F016B3T150
E
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 Smart 3 Advanced Boot Block Flash
Memory Enhancements ..............................5
1.2 Product Overview.........................................6
2.0 PRODUCT DESCRIPTION..............................6
2.1 Package Pinouts..........................................7
2.2 Block Organization.....................................11
2.2.1 Parameter Blocks................................11
2.2.2 Main Blocks.........................................11
3.0 PRINCIPLES OF OPERATION .....................14
3.1 Bus Operation............................................14
3.1.1 Read....................................................15
3.1.2 Output Disable.....................................15
3.1.3 Standby...............................................15
3.1.4 Deep Power-Down/Reset....................15
3.1.5 Write....................................................15
3.2 Modes of Operation....................................15
3.2.1 Read Array..........................................16
3.2.2 Read Intelligent Identifier.....................17
3.2.3 Read Status Register ..........................17
3.2.4 Program Mode.....................................18
3.2.5 Erase Mode.........................................19
3.3 Block Locking.............................................26
3.3.1 V
PP
= V
IL
for Complete Protection .......26
3.3.2 WP# = V
IL
for Block Locking................26
3.3.3 WP# = V
IH
for Block Unlocking............26
3.4 V
PP
Program and Erase Voltages ..............26
3.5 Power Consumption...................................26
3.5.1 Active Power .......................................26
3.5.2 Automatic Power Savings (APS) .........27
3.5.3 Standby Power....................................27
3.5.4 Deep Power-Down Mode.....................27
3.6 Power-Up/Down Operation.........................27
3.6.1 RP# Connected to System Reset ........27
3.6.2 V
CC
, V
PP
and RP# Transitions.............27
3.7 Power Supply Decoupling ..........................28
3.7.1 V
PP
Trace on Printed Circuit Boards....28
4.0 ABSOLUTE MAXIMUM RATINGS................29
5.0 OPERATING CONDITIONS
(V
CCQ
= 2.7V
–3.6V).......................................29
5.1 DC Characteristics: V
CCQ
= 2.7V
–3.6V.......30
6.0 OPERATING CONDITIONS
(V
CCQ
= 1.8V
–2.2V).......................................34
6.1 DC Characteristics: V
CCQ
= 1.8V
–2.2V.......34
7.0 AC CHARACTERISTICS...............................39
7.1 Reset Operations .......................................43
APPENDIX A: Ordering Information .................45
APPENDIX B: Write State Machine Current/
Next States ..................................................46
APPENDIX C: Access Time vs.
Capacitive Load...........................................47
APPENDIX D: Architecture Block Diagram ......48
APPENDIX E: Additional Information ...............49
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