參數(shù)資料
型號: TE28F010-90
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁數(shù): 23/33頁
文件大小: 895K
代理商: TE28F010-90
E
4.6
28F010
23
DC Characteristics
—TTL/NMOS Compatible—Extended Temperature
Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
ID
A
9
Intelligent Identifier
Current
1, 2
90
500
μA
A
9
= V
ID
V
PPL
V
PP
during Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Program are
Inhibited when V
PP
= V
PPL
V
PPH
V
PP
during Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.5
V
NOTES:
Refer to Section 4.4.
4.7
DC Characteristics
—CMOS Compatible—Extended Temperature Products
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
LI
Input Leakage Current
1
±1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or V
SS
I
LO
Output Leakage Current
1
±10
μA
V
CC
= V
CC
Max
V
OUT
= V
CC
or V
SS
I
CCS
V
CC
Standby Current
1
50
100
μA
V
CC
= V
CC
Max
CE# = V
CC
±0.2 V
I
CC1
V
CC
Active Read Current
1
10
30
mA
V
CC
= V
CC
Max, CE# = V
IL
f = 10 MHz, I
OUT
= 0 mA
I
CC2
V
CC
Programming Current
1, 2
1.0
10
mA
Programming in Progress
I
CC3
V
CC
Erase Current
1, 2
5.0
30
mA
Erasure in Progress
I
CC4
V
CC
Program Verify
Current
1, 2
5.0
30
mA
V
PP
= V
PPH
Program Verify in Progress
I
CC5
V
CC
Erase Verify Current
1, 2
5.0
30
mA
V
PP
= V
PPH
Erase Verify in Progress
I
PPS
V
PP
Leakage Current
1
±10
μA
V
PP
V
CC
I
PP1
V
PP
Read Current, ID
Current or Standby
Current
1
90
200
μA
V
PP
> V
CC
±10
V
PP
V
CC
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