參數(shù)資料
型號(hào): TE28F010-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁數(shù): 7/33頁
文件大?。?/td> 895K
代理商: TE28F010-150
E
28F010
7
Table 1. Pin Description
(Continued)
Symbol
Type
Name and Function
V
PP
ERASE/PROGRAM POWER SUPPLY
for writing the command register,
erasing the entire array, or programming bytes in the array.
V
CC
DEVICE POWER SUPPLY
(5 V ±10%)
V
SS
GROUND
NC
NO INTERNAL CONNECTION
to device. Pin may be driven or left floating.
Figure 2. 28F010 Pin Configurations
相關(guān)PDF資料
PDF描述
TE28F010-120 28F010 1024K (128K X 8) CMOS FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F010-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
TE28F016 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F016B3B110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F016B3B120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F016B3B150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE