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參數(shù)資料
| 型號： | TE28F010-150 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封裝： | 0.310 X 0.720 INCH, TSOP-32 |
| 文件頁數(shù)： | 27/33頁 |
| 文件大小： | 895K |
| 代理商： | TE28F010-150 |
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E
4.9
28F010
27
AC Characteristics
—Write/Erase/Program Only Operations
(1)
—
Commercial and Extended Temperature Products
Versions
28F010-90
(2)
28F010-120
(2)
28F010-150
(2)
Symbol
Characteristic
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/t
WC
Write Cycle Time
90
120
150
ns
t
AVWL
/t
AS
Address Set-Up Time
0
0
0
ns
t
WLAX
/t
AH
Address Hold Time
40
40
40
ns
3
55
t
DVWH
/t
DS
Data Set-Up Time
40
40
40
ns
55
t
WHDX
/t
DH
Data Hold Time
10
10
10
ns
t
WHGL
Write Recovery Time before
Read
6
6
6
μs
t
GHWL
Read Recovery Time before
Write
4
0
0
0
ns
t
ELWL
/t
CS
Chip Enable Set-Up Time
before Write
15
15
15
ns
t
WHEH
/t
CH
Chip Enable Hold Time
0
0
0
ns
t
WLWH
/t
WP
Write Pulse Width
40
60
60
ns
3
55
t
WHWL
/t
WPH
Write Pulse Width High
20
20
20
ns
t
WHWH1
Duration of Programming
Operation
5
10
10
10
μs
t
WHWH2
Duration of Erase Operation
5
9.5
9.5
9.5
ms
t
VPEL
V
PP
Set-Up Time to Chip
Enable Low
4
1
1
1
μs
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read-Only Operations
See AC Input/Output Waveformand AC Testing Load Circuitfor testing characteristics.
Minimum specification for extended temperature product.
Guaranteed by design.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
2.
3.
4.
5.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F010-120 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F016B3B110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3B110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3B90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F010-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F016 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
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