參數(shù)資料
型號: TE28F008SC-100
廠商: INTEL CORP
元件分類: DRAM
英文描述: BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述: 1M X 8 FLASH 3.3V PROM, 100 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁數(shù): 3/48頁
文件大?。?/td> 304K
代理商: TE28F008SC-100
E
SMART 3 ADVANCED BOOT BLOCK
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 Smart 3 Advanced Boot Block Flash
Memory Enhancements ..............................5
1.2 Product Overview.........................................6
2.0 PRODUCT DESCRIPTION..............................6
2.1 Package Pinouts..........................................6
2.2 Block Organization.....................................11
2.2.1 Parameter Blocks................................11
2.2.2 Main Blocks.........................................11
3.0 PRINCIPLES OF OPERATION .....................11
3.1 Bus Operation............................................12
3.1.1 Read....................................................13
3.1.2 Output Disable.....................................13
3.1.3 Standby...............................................13
3.1.4 Deep Power-Down / Reset..................13
3.1.5 Write....................................................13
3.2 Modes of Operation....................................14
3.2.1 Read Array..........................................14
3.2.2 Read Identifier.....................................15
3.2.3 Read Status Register ..........................16
3.2.4 Program Mode.....................................16
3.2.5 Erase Mode.........................................17
3.3 Block Locking.............................................20
3.3.1 WP# = V
IL
for Block Locking................20
3.3.2 WP# = V
IH
for Block Unlocking............20
3.4 V
PP
Program and Erase Voltages ..............20
3.4.1 V
PP
= V
IL
for Complete Protection .......20
3.5 Power Consumption...................................20
3.5.1 Active Power .......................................21
3.5.2 Automatic Power Savings (APS) .........21
3.5.3 Standby Power....................................21
3.5.4 Deep Power-Down Mode.....................21
3.6 Power-Up/Down Operation.........................21
3.6.1 RP# Connected to System Reset ........21
3.6.2 V
CC
, V
PP
and RP# Transitions.............21
3.7 Power Supply Decoupling ..........................22
4.0 ELECTRICAL SPECIFICATIONS..................23
4.1 Absolute Maximum Ratings........................23
4.2 Operating Conditions..................................24
4.3 Capacitance...............................................24
4.4 DC Characteristics .....................................25
4.5 AC Characteristics
—Read Operations .......28
4.6 AC Characteristics—Write Operations........30
4.7 Program and Erase Timings.......................31
5.0 RESET OPERATIONS ..................................33
6.0 ORDERING INFORMATION..........................34
7.0 ADDITIONAL INFORMATION.......................36
APPENDIX A: Write State Machine
Current/Next States.....................................37
APPENDIX B: Access Time vs.
Capacitive Load...........................................38
APPENDIX C: Architecture Block Diagram ......39
APPENDIX D: Word-Wide Memory Map
Diagrams......................................................40
APPENDIX E: Byte Wide Memory Map
Diagrams......................................................43
APPENDIX F: Program and Erase Flowcharts.45
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